2SD2081
- Mfr.Part #
- 2SD2081
- Manufacturer
- Sanken Electric Co., Ltd.
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN DARL 120V 10A TO220F
- Stock
- 20,907
- In Stock :
- 20,907
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- Manufacturer :
- Sanken Electric Co., Ltd.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transition Frequency :
- 60MHz
- Max Power Dissipation :
- 30W
- Transistor Application :
- SWITCHING
- Pbfree Code :
- yes
- Operating Temperature :
- 150°C TJ
- Mount :
- Through Hole
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 10A
- Packaging :
- Bulk
- Transistor Type :
- NPN - Darlington
- Lead Free :
- Lead Free
- Current - Collector (Ic) (Max) :
- 10 A
- Pin Count :
- 3
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Power - Max :
- 30W
- Series :
- -
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Position :
- Single
- Reach Compliance Code :
- Unknown
- Supplier Device Package :
- TO-220F
- Collector Emitter Voltage (VCEO) :
- 1.5V
- Number of Terminations :
- 3
- Package :
- Bulk
- Factory Lead Time :
- 12 Weeks
- Current - Collector Cutoff (Max) :
- 10μA ICBO
- JEDEC-95 Code :
- TO-220AB
- Published :
- 2001
- Product Status :
- Obsolete
- Configuration :
- DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
- Frequency - Transition :
- 60MHz
- Case Connection :
- Isolated
- Manufacturer :
- Sanken Electric Co Ltd
- Qualification Status :
- Not Qualified
- Mounting Type :
- Through Hole
- RoHS Status :
- RoHS Compliant
- Collector-Emitter Voltage-Max :
- 120 V
- Package / Case :
- TO-220-3 Full Pack
- Package Shape :
- RECTANGULAR
- Collector Emitter Breakdown Voltage :
- 120V
- Number of Terminals :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Polarity/Channel Type :
- NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 2000 @ 5A 4V
- Additional Feature :
- BUILT IN BIAS RESISTANCE RATIO IS 0.1
- Vce Saturation (Max) @ Ib, Ic :
- 1.5V @ 5mA, 5A
- ECCN Code :
- EAR99
- Voltage - Collector Emitter Breakdown (Max) :
- 120 V
- DC Current Gain-Min (hFE) :
- 2000
- Surface Mount :
- No
- Terminal Form :
- THROUGH-HOLE
- Number of Elements :
- 1
- Power Dissipation-Max (Abs) :
- 30 W
- JESD-30 Code :
- R-PSFM-T3
- Collector Current-Max (IC) :
- 10 A
- Datasheets
- 2SD2081

NPN - Darlington 150°C TJ 10μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Bulk Through Hole
2SD2081 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 2000 @ 5A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 5mA, 5A.The part has a transition frequency of 60MHz.This product comes in a TO-220F device package from the supplier.A maximal collector-emitter voltage setting of 120 V is available.Device displays Collector Emitter Breakdown (120 V maximal voltage).Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.
2SD2081 Features
the DC current gain for this device is 2000 @ 5A 4V
the vce saturation(Max) is 1.5V @ 5mA, 5A
a transition frequency of 60MHz
the supplier device package of TO-220F
2SD2081 Applications
There are a lot of Sanken
2SD2081 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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