2SD2012
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- Mfr.Part #
- 2SD2012
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220F
- Stock
- 38,333
- In Stock ：
- 38,333
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- ECCN Code :
- EAR99
- Packaging :
- Tube
- Mount :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 7V
- Element Configuration :
- Single
- Power Dissipation :
- 25W
- Current - Collector (Ic) (Max) :
- 3A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Collector Base Voltage (VCBO) :
- 60V
- Radiation Hardening :
- No
- Transistor Type :
- NPN
- Max Collector Current :
- 3A
- Pbfree Code :
- yes
- Case Connection :
- Isolated
- Gain Bandwidth Product :
- 3MHz
- Mounting Type :
- Through Hole
- Contact Plating :
- Tin
- Transistor Element Material :
- SILICON
- Polarity/Channel Type :
- NPN
- Operating Temperature :
- 150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Package / Case :
- TO-220-3 Full Pack
- Transistor Application :
- SWITCHING
- Number of Terminations :
- 3
- hFE Min :
- 20
- Number of Elements :
- 1
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Transition Frequency :
- 3MHz
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- Lead Free :
- Lead Free
- Max Power Dissipation :
- 25W
- Collector Emitter Saturation Voltage :
- 400mV
- Base Part Number :
- 2SD2
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Collector Emitter Voltage (VCEO) :
- 60V
- Datasheets
- 2SD2012
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
2SD2012 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 1V @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 3MHz.A maximum collector current of 3A volts can be achieved.
2SD2012 Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 3MHz
2SD2012 Applications
There are a lot of STMicroelectronics
2SD2012 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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