2SD2012
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- Mfr.Part #
- 2SD2012
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3 Full Pack
- Datasheet
- Download
- Description
- TRANS NPN 60V 3A TO220F
- Stock
- 38,333
- In Stock ：
- 38,333
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Power Dissipation :
- 25W
- Current - Collector Cutoff (Max) :
- 100μA ICBO
- Contact Plating :
- Tin
- Packaging :
- Tube
- Case Connection :
- Isolated
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 400mV
- Emitter Base Voltage (VEBO) :
- 7V
- Number of Terminations :
- 3
- Number of Pins :
- 3
- Current - Collector (Ic) (Max) :
- 3A
- Max Power Dissipation :
- 25W
- Base Part Number :
- 2SD2
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Polarity/Channel Type :
- NPN
- Transition Frequency :
- 3MHz
- Radiation Hardening :
- No
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 1V @ 200mA, 2A
- Collector Emitter Voltage (VCEO) :
- 60V
- Element Configuration :
- Single
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 100 @ 500mA 5V
- Collector Emitter Breakdown Voltage :
- 60V
- JESD-609 Code :
- e3
- Gain Bandwidth Product :
- 3MHz
- Mount :
- Through Hole
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3 Full Pack
- RoHS Status :
- ROHS3 Compliant
- Max Collector Current :
- 3A
- Transistor Element Material :
- SILICON
- Transistor Application :
- SWITCHING
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Transistor Type :
- NPN
- Operating Temperature :
- 150°C TJ
- hFE Min :
- 20
- Number of Elements :
- 1
- Datasheets
- 2SD2012
NPN 150°C TJ 100μA ICBO 1 Elements 3 Terminations SILICON NPN TO-220-3 Full Pack Tube Through Hole
2SD2012 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 5V.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.When VCE saturation is 1V @ 200mA, 2A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 7V can achieve high levels of efficiency.In the part, the transition frequency is 3MHz.A maximum collector current of 3A volts can be achieved.
2SD2012 Features
the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 1V @ 200mA, 2A
the emitter base voltage is kept at 7V
a transition frequency of 3MHz
2SD2012 Applications
There are a lot of STMicroelectronics
2SD2012 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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