2SD2673TL
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- Mfr.Part #
- 2SD2673TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS NPN 30V 3A TSMT3
- Stock
- 2,965
- In Stock ：
- 2,965
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 3A
- Operating Temperature :
- 150°C TJ
- Radiation Hardening :
- No
- Mount :
- Surface Mount
- Transistor Type :
- NPN
- Packaging :
- Tape and Reel (TR)
- Max Power Dissipation :
- 1W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pin Count :
- 3
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Lead Free :
- Lead Free
- Pbfree Code :
- yes
- Package / Case :
- SC-96
- JESD-609 Code :
- e1
- Factory Lead Time :
- 20 Weeks
- Max Breakdown Voltage :
- 30V
- Gain Bandwidth Product :
- 200MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Contact Plating :
- Copper, Silver, Tin
- Collector Base Voltage (VCBO) :
- 30V
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 30V
- Emitter Base Voltage (VEBO) :
- 6V
- hFE Min :
- 270
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 120mV
- Power Dissipation :
- 1W
- Vce Saturation (Max) @ Ib, Ic :
- 250mV @ 30mA, 1.5A
- Base Part Number :
- 2SD2673
- Polarity/Channel Type :
- NPN
- Terminal Form :
- Gull wing
- Max Collector Current :
- 3A
- Published :
- 2005
- Frequency :
- 200MHz
- RoHS Status :
- ROHS3 Compliant
- Transition Frequency :
- 200MHz
- Voltage - Rated DC :
- 30V
- Transistor Element Material :
- SILICON
- Terminal Position :
- Dual
- Number of Pins :
- 3
- Collector Emitter Voltage (VCEO) :
- 30V
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- Mounting Type :
- Surface Mount
- Number of Elements :
- 1
- Datasheets
- 2SD2673TL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-96 Tape & Reel (TR) Surface Mount
2SD2673TL Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 270 @ 200mA 2V.The collector emitter saturation voltage is 120mV, which allows for maximum design flexibility.When VCE saturation is 250mV @ 30mA, 1.5A, transistor means Ic has reached transistors maximum value (saturated).Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 3A.In the part, the transition frequency is 200MHz.This device can take an input voltage of 30V volts before it breaks down.A maximum collector current of 3A volts can be achieved.
2SD2673TL Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 250mV @ 30mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is 3A
a transition frequency of 200MHz
2SD2673TL Applications
There are a lot of ROHM Semiconductor
2SD2673TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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