2SD2671TL
- Mfr.Part #
- 2SD2671TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS NPN 30V 2A TSMT3
- Stock
- 8,012
- In Stock :
- 8,012
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Packaging :
- Tape and Reel (TR)
- Contact Plating :
- Copper, Silver, Tin
- Terminal Form :
- Gull wing
- Terminal Position :
- Dual
- Transistor Element Material :
- SILICON
- Collector Emitter Voltage (VCEO) :
- 30V
- Continuous Collector Current :
- 2A
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- Current Rating :
- 2A
- Lead Free :
- Lead Free
- Package / Case :
- SC-96
- Transition Frequency :
- 280MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 200mA 2V
- Transistor Application :
- AMPLIFIER
- Gain Bandwidth Product :
- 280MHz
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Factory Lead Time :
- 20 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 370mV @ 75mA, 1.5A
- Collector Emitter Breakdown Voltage :
- 30V
- Voltage - Rated DC :
- 30V
- Operating Temperature :
- 150°C TJ
- Base Part Number :
- 2SD2671
- HTS Code :
- 8541.21.00.75
- Max Collector Current :
- 2A
- Mounting Type :
- Surface Mount
- Transistor Type :
- NPN
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 6V
- Pbfree Code :
- yes
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 180mV
- JESD-609 Code :
- e1
- Max Power Dissipation :
- 1W
- Qualification Status :
- Not Qualified
- Collector Base Voltage (VCBO) :
- 30V
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Element Configuration :
- Single
- Mount :
- Surface Mount
- Published :
- 2005
- Max Breakdown Voltage :
- 30V
- Number of Terminations :
- 3
- hFE Min :
- 270
- Datasheets
- 2SD2671TL

NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-96 Tape & Reel (TR) Surface Mount
2SD2671TL Overview
DC current gain in this device equals 270 @ 200mA 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 180mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 370mV @ 75mA, 1.5A.Single BJT transistor is essential to maintain the continuous collector voltage at 2A to achieve high efficiency.An emitter's base voltage can be kept at 6V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.As a result, the part has a transition frequency of 280MHz.Breakdown input voltage is 30V volts.In extreme cases, the collector current can be as low as 2A volts.
2SD2671TL Features
the DC current gain for this device is 270 @ 200mA 2V
a collector emitter saturation voltage of 180mV
the vce saturation(Max) is 370mV @ 75mA, 1.5A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 280MHz
2SD2671TL Applications
There are a lot of ROHM Semiconductor
2SD2671TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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