2SD2657TL
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- Mfr.Part #
- 2SD2657TL
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-96
- Datasheet
- Download
- Description
- TRANS NPN 30V 1.5A TSMT3
- Stock
- 23,986
- In Stock ：
- 23,986
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- hFE Min :
- 270
- Voltage - Rated DC :
- 30V
- Collector Emitter Saturation Voltage :
- 350mV
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Radiation Hardening :
- No
- Current Rating :
- 1.5A
- Frequency :
- 300MHz
- Polarity/Channel Type :
- NPN
- Emitter Base Voltage (VEBO) :
- 6V
- Transition Frequency :
- 300MHz
- Transistor Element Material :
- SILICON
- Contact Plating :
- Copper, Silver, Tin
- Peak Reflow Temperature (Cel) :
- 260
- Max Power Dissipation :
- 1W
- Transistor Type :
- NPN
- Package / Case :
- SC-96
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Terminal Form :
- Gull wing
- Element Configuration :
- Single
- Power Dissipation :
- 1W
- Mount :
- Surface Mount
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Collector Emitter Breakdown Voltage :
- 30V
- Terminal Position :
- Dual
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Pbfree Code :
- yes
- Packaging :
- Tape and Reel (TR)
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Mounting Type :
- Surface Mount
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- Width :
- 1.6mm
- Max Breakdown Voltage :
- 30V
- ECCN Code :
- EAR99
- Base Part Number :
- 2SD2657
- Operating Temperature :
- 150°C TJ
- Max Collector Current :
- 1.5A
- Gain Bandwidth Product :
- 300MHz
- Height :
- 900μm
- Number of Elements :
- 1
- Published :
- 2005
- Factory Lead Time :
- 20 Weeks
- Collector Base Voltage (VCBO) :
- 30V
- Length :
- 2.9mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Collector Emitter Voltage (VCEO) :
- 30V
- Datasheets
- 2SD2657TL
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-96 Tape & Reel (TR) Surface Mount
2SD2657TL Overview
This device has a DC current gain of 270 @ 100mA 2V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 350mV.A VCE saturation (Max) of 350mV @ 50mA, 1A means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 6V.This device has a current rating of 1.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.As you can see, the part has a transition frequency of 300MHz.A breakdown input voltage of 30V volts can be used.A maximum collector current of 1.5A volts is possible.
2SD2657TL Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 1.5A
a transition frequency of 300MHz
2SD2657TL Applications
There are a lot of ROHM Semiconductor
2SD2657TL applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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