2SD2656T106
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- Mfr.Part #
- 2SD2656T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A UMT3
- Stock
- 2,500
- In Stock ：
- 2,500
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Polarity/Channel Type :
- NPN
- Radiation Hardening :
- No
- Length :
- 2.1mm
- Number of Elements :
- 1
- Pin Count :
- 3
- Mounting Type :
- Surface Mount
- Max Breakdown Voltage :
- 30V
- Voltage - Rated DC :
- 30V
- Transistor Type :
- NPN
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Terminal Finish :
- TIN SILVER COPPER
- hFE Min :
- 270
- Package / Case :
- SC-70, SOT-323
- Gain Bandwidth Product :
- 400MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Pbfree Code :
- yes
- Number of Pins :
- 3
- Number of Terminations :
- 3
- Collector Base Voltage (VCBO) :
- 30V
- Max Frequency :
- 100MHz
- Base Part Number :
- 2SD2656
- Mount :
- Surface Mount
- Transition Frequency :
- 400MHz
- Max Collector Current :
- 1A
- JESD-609 Code :
- e1
- Terminal Position :
- Dual
- ECCN Code :
- EAR99
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Terminal Form :
- Gull wing
- Current Rating :
- 1A
- Published :
- 2002
- Contact Plating :
- Copper, Silver, Tin
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- 1A
- Max Power Dissipation :
- 200mW
- Collector Emitter Voltage (VCEO) :
- 30V
- Operating Temperature :
- 150°C TJ
- Transistor Application :
- AMPLIFIER
- Time@Peak Reflow Temperature-Max (s) :
- 10
- HTS Code :
- 8541.21.00.75
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 13 Weeks
- Collector Emitter Breakdown Voltage :
- 30V
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Saturation Voltage :
- 140mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Width :
- 1.35mm
- Height :
- 900μm
- Datasheets
- 2SD2656T106
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SD2656T106 Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 140mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 25mA, 500mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 400MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2SD2656T106 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 400MHz
2SD2656T106 Applications
There are a lot of ROHM Semiconductor
2SD2656T106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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