2SD2656T106
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- Mfr.Part #
- 2SD2656T106
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 30V 1A UMT3
- Stock
- 2,500
- In Stock ：
- 2,500
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 13 Weeks
- Max Breakdown Voltage :
- 30V
- Mounting Type :
- Surface Mount
- Collector Emitter Breakdown Voltage :
- 30V
- Current Rating :
- 1A
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- SC-70, SOT-323
- Max Frequency :
- 100MHz
- Width :
- 1.35mm
- Polarity/Channel Type :
- NPN
- Number of Pins :
- 3
- Length :
- 2.1mm
- Terminal Position :
- Dual
- Collector Emitter Voltage (VCEO) :
- 30V
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Packaging :
- Tape and Reel (TR)
- Collector Emitter Saturation Voltage :
- 140mV
- hFE Min :
- 270
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 270 @ 100mA 2V
- Base Part Number :
- 2SD2656
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 25mA, 500mA
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Continuous Collector Current :
- 1A
- Mount :
- Surface Mount
- Emitter Base Voltage (VEBO) :
- 6V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Transistor Type :
- NPN
- Number of Terminations :
- 3
- Published :
- 2002
- Transition Frequency :
- 400MHz
- Max Power Dissipation :
- 200mW
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- HTS Code :
- 8541.21.00.75
- Contact Plating :
- Copper, Silver, Tin
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e1
- Terminal Form :
- Gull wing
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- Max Collector Current :
- 1A
- Height :
- 900μm
- Number of Elements :
- 1
- Voltage - Rated DC :
- 30V
- Pin Count :
- 3
- Terminal Finish :
- TIN SILVER COPPER
- Gain Bandwidth Product :
- 400MHz
- Collector Base Voltage (VCBO) :
- 30V
- Datasheets
- 2SD2656T106
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SD2656T106 Overview
In this device, the DC current gain is 270 @ 100mA 2V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 140mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 350mV @ 25mA, 500mA.A 1A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 6V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 1A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 400MHz.Input voltage breakdown is available at 30V volts.Single BJT transistor is possible for the collector current to fall as low as 1A volts at Single BJT transistors maximum.
2SD2656T106 Features
the DC current gain for this device is 270 @ 100mA 2V
a collector emitter saturation voltage of 140mV
the vce saturation(Max) is 350mV @ 25mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 1A
a transition frequency of 400MHz
2SD2656T106 Applications
There are a lot of ROHM Semiconductor
2SD2656T106 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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