2SD2654TLW
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- Mfr.Part #
- 2SD2654TLW
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-75, SOT-416
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A EMT3
- Stock
- 9,147
- In Stock ：
- 9,147
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Emitter Base Voltage (VEBO) :
- 12V
- Collector Emitter Saturation Voltage :
- 300mV
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- ECCN Code :
- EAR99
- Gain Bandwidth Product :
- 250MHz
- Length :
- 1.7mm
- Factory Lead Time :
- 13 Weeks
- Mounting Type :
- Surface Mount
- Pin Count :
- 3
- Qualification Status :
- Not Qualified
- Max Frequency :
- 100MHz
- Mount :
- Surface Mount
- Terminal Finish :
- TIN SILVER COPPER
- Contact Plating :
- Copper, Silver, Tin
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 1mA 5V
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN
- Terminal Position :
- Dual
- Packaging :
- Tape and Reel (TR)
- Width :
- 900μm
- JESD-609 Code :
- e1
- Operating Temperature :
- 150°C TJ
- Number of Pins :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Max Power Dissipation :
- 150mW
- Transition Frequency :
- 250MHz
- Collector Base Voltage (VCBO) :
- 60V
- HTS Code :
- 8541.21.00.75
- Published :
- 2004
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Package / Case :
- SC-75, SOT-416
- Number of Terminations :
- 3
- Collector Emitter Breakdown Voltage :
- 50V
- Current - Collector Cutoff (Max) :
- 300nA ICBO
- Collector Emitter Voltage (VCEO) :
- 50V
- Current - Collector (Ic) (Max) :
- 150mA
- Terminal Form :
- Gull wing
- Base Part Number :
- 2SD2654
- Polarity/Channel Type :
- NPN
- Height :
- 700μm
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 150mA
- Element Configuration :
- Single
- Datasheets
- 2SD2654TLW
NPN 150°C TJ 300nA ICBO 1 Elements 3 Terminations SILICON NPN SC-75, SOT-416 Tape & Reel (TR) Surface Mount
2SD2654TLW Overview
This device has a DC current gain of 820 @ 1mA 5V, which is the ratio between the base current and the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 300mV.A VCE saturation (Max) of 300mV @ 5mA, 50mA means Ic has reached its maximum value(saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 12V.As you can see, the part has a transition frequency of 250MHz.A maximum collector current of 150mA volts is possible.
2SD2654TLW Features
the DC current gain for this device is 820 @ 1mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 12V
a transition frequency of 250MHz
2SD2654TLW Applications
There are a lot of ROHM Semiconductor
2SD2654TLW applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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