2SD2391T100Q
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- Mfr.Part #
- 2SD2391T100Q
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 60V 2A MPT3
- Stock
- 6,247
- In Stock ：
- 6,247
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Width :
- 2.7mm
- Radiation Hardening :
- No
- ECCN Code :
- EAR99
- Voltage - Rated DC :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- Current - Collector Cutoff (Max) :
- 100nA ICBO
- Published :
- 2009
- Gain Bandwidth Product :
- 210MHz
- Power Dissipation :
- 500mW
- hFE Min :
- 45
- Contact Plating :
- Copper, Tin
- Base Part Number :
- 2SD2391
- JESD-609 Code :
- e2
- Transistor Element Material :
- SILICON
- Mount :
- Surface Mount
- Number of Terminations :
- 3
- Terminal Form :
- Flat
- Collector Emitter Voltage (VCEO) :
- 60V
- Max Power Dissipation :
- 2W
- Transistor Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tape and Reel (TR)
- Case Connection :
- COLLECTOR
- HTS Code :
- 8541.29.00.75
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Pbfree Code :
- yes
- Termination :
- SMD/SMT
- Package / Case :
- TO-243AA
- Max Collector Current :
- 2A
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Mounting Type :
- Surface Mount
- Element Configuration :
- Single
- Transition Frequency :
- 210MHz
- Operating Temperature :
- 150°C TJ
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current Rating :
- 2A
- Max Breakdown Voltage :
- 60V
- Emitter Base Voltage (VEBO) :
- 6V
- Vce Saturation (Max) @ Ib, Ic :
- 350mV @ 50mA, 1A
- Terminal Finish :
- Tin/Copper (Sn/Cu)
- Max Frequency :
- 100MHz
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Continuous Collector Current :
- 2A
- Transistor Application :
- AMPLIFIER
- Collector Emitter Saturation Voltage :
- 130mV
- Height :
- 1.4mm
- Length :
- 4.7mm
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 120 @ 500mA 2V
- Factory Lead Time :
- 10 Weeks
- Polarity/Channel Type :
- NPN
- Datasheets
- 2SD2391T100Q
NPN 150°C TJ 100nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD2391T100Q Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 120 @ 500mA 2V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 130mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 350mV @ 50mA, 1A.Single BJT transistor is recommended to keep the continuous collector voltage at 2A in order to achieve high efficiency.The emitter base voltage can be kept at 6V for high efficiency.The current rating of this fuse is 2A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.The part has a transition frequency of 210MHz.The breakdown input voltage is 60V volts.Single BJT transistor is possible to have a collector current as low as 2A volts at Single BJT transistors maximum.
2SD2391T100Q Features
the DC current gain for this device is 120 @ 500mA 2V
a collector emitter saturation voltage of 130mV
the vce saturation(Max) is 350mV @ 50mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 210MHz
2SD2391T100Q Applications
There are a lot of ROHM Semiconductor
2SD2391T100Q applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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