2SD2351T106W
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- Mfr.Part #
- 2SD2351T106W
- Manufacturer
- ROHM Semiconductor
- Package / Case
- SC-70, SOT-323
- Datasheet
- Download
- Description
- TRANS NPN 50V 0.15A UMT3
- Stock
- 16,690
- In Stock ：
- 16,690
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- 50V
- Terminal Finish :
- Tin/Silver/Copper (Sn/Ag/Cu)
- Continuous Collector Current :
- 150mA
- Mount :
- Surface Mount
- Mounting Type :
- Surface Mount
- Pbfree Code :
- yes
- Number of Elements :
- 1
- hFE Min :
- 820
- Collector Emitter Voltage (VCEO) :
- 50V
- Published :
- 2004
- Lead Free :
- Lead Free
- Contact Plating :
- Copper, Silver, Tin
- Max Power Dissipation :
- 200mW
- Max Frequency :
- 100MHz
- Terminal Form :
- Gull wing
- Transition Frequency :
- 250MHz
- Transistor Element Material :
- SILICON
- Packaging :
- Tape and Reel (TR)
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Length :
- 2mm
- Collector Emitter Saturation Voltage :
- 300mV
- HTS Code :
- 8541.21.00.75
- ECCN Code :
- EAR99
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity/Channel Type :
- NPN
- Package / Case :
- SC-70, SOT-323
- Pin Count :
- 3
- JESD-609 Code :
- e1
- Factory Lead Time :
- 13 Weeks
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 1mA 5V
- Current - Collector Cutoff (Max) :
- 300nA ICBO
- Emitter Base Voltage (VEBO) :
- 12V
- Terminal Position :
- Dual
- Radiation Hardening :
- No
- Max Breakdown Voltage :
- 50V
- Current Rating :
- 150mA
- Vce Saturation (Max) @ Ib, Ic :
- 300mV @ 5mA, 50mA
- Base Part Number :
- 2SD2351
- Gain Bandwidth Product :
- 250MHz
- Operating Temperature :
- 150°C TJ
- Transistor Type :
- NPN
- Max Collector Current :
- 150mA
- Power Dissipation :
- 200mW
- Width :
- 1.35mm
- Collector Emitter Breakdown Voltage :
- 50V
- Height :
- 900μm
- Peak Reflow Temperature (Cel) :
- 260
- Time@Peak Reflow Temperature-Max (s) :
- 10
- REACH SVHC :
- No SVHC
- Number of Pins :
- 3
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- 2SD2351T106W
NPN 150°C TJ 300nA ICBO 1 Elements 3 Terminations SILICON NPN SC-70, SOT-323 Tape & Reel (TR) Surface Mount
2SD2351T106W Overview
DC current gain in this device equals 820 @ 1mA 5V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is 300mV, giving you a wide variety of design options.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 300mV @ 5mA, 50mA.Single BJT transistor is essential to maintain the continuous collector voltage at 150mA to achieve high efficiency.An emitter's base voltage can be kept at 12V to gain high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 150mA current rating.As a result, the part has a transition frequency of 250MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 150mA volts.
2SD2351T106W Features
the DC current gain for this device is 820 @ 1mA 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 5mA, 50mA
the emitter base voltage is kept at 12V
the current rating of this device is 150mA
a transition frequency of 250MHz
2SD2351T106W Applications
There are a lot of ROHM Semiconductor
2SD2351T106W applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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