2SD2153T100V
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- Mfr.Part #
- 2SD2153T100V
- Manufacturer
- ROHM Semiconductor
- Package / Case
- TO-243AA
- Datasheet
- Download
- Description
- TRANS NPN 25V 2A MPT3
- Stock
- 9,461
- In Stock ：
- 9,461
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- Manufacturer :
- ROHM Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Gain Bandwidth Product :
- 110MHz
- Terminal Form :
- Flat
- Number of Terminations :
- 3
- Lead Free :
- Lead Free
- Package / Case :
- TO-243AA
- Contact Plating :
- Copper, Tin
- Packaging :
- Tape and Reel (TR)
- Current Rating :
- 2A
- JESD-609 Code :
- e2
- Max Collector Current :
- 2A
- Element Configuration :
- Single
- Operating Temperature :
- 150°C TJ
- Pin Count :
- 3
- Max Frequency :
- 100MHz
- HTS Code :
- 8541.21.00.75
- hFE Min :
- 820
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Height :
- 1.5mm
- Transistor Type :
- NPN
- Max Breakdown Voltage :
- 25V
- Current - Collector Cutoff (Max) :
- 500nA ICBO
- Mounting Type :
- Surface Mount
- Continuous Collector Current :
- 2A
- Mount :
- Surface Mount
- Length :
- 4.5mm
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 820 @ 500mA 6V
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Voltage - Rated DC :
- 25V
- Polarity/Channel Type :
- NPN
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Pbfree Code :
- yes
- Collector Emitter Saturation Voltage :
- 120mV
- Peak Reflow Temperature (Cel) :
- 260
- Emitter Base Voltage (VEBO) :
- 6V
- Collector Emitter Voltage (VCEO) :
- 25V
- Number of Pins :
- 3
- Terminal Finish :
- TIN COPPER
- Base Part Number :
- 2SD2153
- Collector Emitter Breakdown Voltage :
- 25V
- Transistor Element Material :
- SILICON
- Transition Frequency :
- 110MHz
- VCEsat-Max :
- 0.5 V
- Time@Peak Reflow Temperature-Max (s) :
- 10
- Width :
- 2.5mm
- Max Power Dissipation :
- 2W
- Number of Elements :
- 1
- Collector Base Voltage (VCBO) :
- 30V
- Vce Saturation (Max) @ Ib, Ic :
- 500mV @ 20mA, 1A
- Factory Lead Time :
- 13 Weeks
- Datasheets
- 2SD2153T100V
NPN 150°C TJ 500nA ICBO 1 Elements 3 Terminations SILICON NPN TO-243AA Tape & Reel (TR) Surface Mount
2SD2153T100V Overview
This device has a DC current gain of 820 @ 500mA 6V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 120mV allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).A constant collector voltage of 2A is necessary for high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 2A.In this part, there is a transition frequency of 110MHz.As a result, it can handle voltages as low as 25V volts.The maximum collector current is 2A volts.
2SD2153T100V Features
the DC current gain for this device is 820 @ 500mA 6V
a collector emitter saturation voltage of 120mV
the vce saturation(Max) is 500mV @ 20mA, 1A
the emitter base voltage is kept at 6V
the current rating of this device is 2A
a transition frequency of 110MHz
2SD2153T100V Applications
There are a lot of ROHM Semiconductor
2SD2153T100V applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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