ZXMN3A01E6TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Package / Case :

SOT-23-6

Terminal Position :

Dual

Current Rating :

2.8A

Continuous Drain Current (ID) :

3A

Gate Charge (Qg) (Max) @ Vgs :

3.9nC @ 10V

Gate to Source Voltage (Vgs) :

20V

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta

Drain Current-Max (Abs) (ID) :

2.4A

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Rise Time :

2.3ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height :

1.3mm

Voltage - Rated DC :

30V

Lead Free :

Lead Free

Configuration :

SINGLE WITH BUILT-IN DIODE

Mount :

Surface Mount

ECCN Code :

EAR99

Length :

3.1mm

Pin Count :

6

REACH SVHC :

No SVHC

Number of Terminations :

6

Fall Time (Typ) :

2.3 ns

Width :

1.8mm

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Published :

2006

Time@Peak Reflow Temperature-Max (s) :

40

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Rds On (Max) @ Id, Vgs :

120m Ω @ 2.5A, 10V

Terminal Finish :

Matte Tin (Sn)

Input Capacitance (Ciss) (Max) @ Vds :

190pF @ 25V

Pbfree Code :

yes

FET Type :

N-Channel

Number of Channels :

1

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1V @ 250μA

Transistor Element Material :

SILICON

Power Dissipation :

1.7W

Mounting Type :

Surface Mount

Number of Elements :

1

Vgs (Max) :

±20V

Weight :

14.996898mg

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

17 Weeks

Power Dissipation-Max :

1.1W Ta

Drain to Source Breakdown Voltage :

30V

Turn-Off Delay Time :

6.6 ns

Turn On Delay Time :

1.7 ns

Number of Pins :

6

Resistance :

120mOhm