TIP141
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- Mfr.Part #
- TIP141
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-247-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 10A TO218
- Stock
- 49,767
- In Stock ：
- 49,767
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 10A
- Transition Frequency :
- 4MHz
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Width :
- 4.9mm
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lead Free :
- Lead Free
- Element Configuration :
- Single
- Transistor Type :
- NPN - Darlington
- ECCN Code :
- EAR99
- Collector Emitter Breakdown Voltage :
- 80V
- Packaging :
- Tube
- Current Rating :
- 10A
- Surface Mount :
- No
- Length :
- 15.2mm
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~150°C TJ
- Number of Pins :
- 3
- Max Power Dissipation :
- 125W
- Current - Collector Cutoff (Max) :
- 2mA
- Base Part Number :
- TIP14*
- RoHS Status :
- ROHS3 Compliant
- Weight :
- 6.500007g
- JESD-609 Code :
- e3
- Transistor Application :
- SWITCHING
- Peak Reflow Temperature (Cel) :
- 260
- Height :
- 12.2mm
- Collector Emitter Saturation Voltage :
- 2V
- Pbfree Code :
- yes
- Pin Count :
- 3
- Vce Saturation (Max) @ Ib, Ic :
- 3V @ 40mA, 10A
- Lifecycle Status :
- ACTIVE (Last Updated: 3 days ago)
- Number of Elements :
- 1
- Terminal Finish :
- Tin (Sn)
- Published :
- 2002
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 80V
- Package / Case :
- TO-247-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 5A 4V
- Mounting Type :
- Through Hole
- hFE Min :
- 1000
- Voltage - Rated DC :
- 80V
- Power Dissipation :
- 125W
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 80V
- Polarity :
- NPN
- Factory Lead Time :
- 2 Weeks
- Datasheets
- TIP141
NPN - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-247-3 Tube Through Hole
TIP141G Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 1000 @ 5A 4V DC current gain.As it features a collector emitter saturation voltage of 2V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.There is a transition frequency of 4MHz in the part.When collector current reaches its maximum, it can reach 10A volts.
TIP141G Features
the DC current gain for this device is 1000 @ 5A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 3V @ 40mA, 10A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 4MHz
TIP141G Applications
There are a lot of ON Semiconductor
TIP141G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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