TIP100
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- Mfr.Part #
- TIP100
- Manufacturer
- Central Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220-3
- Stock
- 759
- In Stock ：
- 759
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- Manufacturer :
- Central Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Voltage (VCEO) :
- 60V
- JEDEC-95 Code :
- TO-220AB
- Polarity :
- NPN
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Base Voltage (VCBO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Emitter Base Voltage (VEBO) :
- 5V
- Case Connection :
- COLLECTOR
- Contact Plating :
- Tin
- Published :
- 2001
- hFE Min :
- 200
- Factory Lead Time :
- 2 Weeks
- Max Power Dissipation :
- 2W
- JESD-609 Code :
- e3
- Height :
- 6.35mm
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Element Material :
- SILICON
- Length :
- 6.35mm
- Voltage - Rated DC :
- 60V
- Max Collector Current :
- 8A
- Pin Count :
- 3
- Collector Emitter Saturation Voltage :
- 2V
- Surface Mount :
- No
- Transistor Type :
- NPN - Darlington
- Collector Emitter Breakdown Voltage :
- 60V
- Radiation Hardening :
- No
- Power Dissipation :
- 40W
- Package / Case :
- TO-220-3
- Width :
- 25.4mm
- Mounting Type :
- Through Hole
- Number of Terminations :
- 3
- Base Part Number :
- TIP10*
- Current - Collector Cutoff (Max) :
- 50μA
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Transistor Application :
- AMPLIFIER
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 4.535924g
- Number of Elements :
- 1
- Continuous Collector Current :
- 4A
- Current Rating :
- 8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Pbfree Code :
- yes
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- Datasheets
- TIP100
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP100G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP100G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP100G Applications
There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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