TIP102

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Base Part Number :

TIP102

Width :

4.6mm

Emitter Base Voltage (VEBO) :

5V

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 80mA, 8A

Power Dissipation :

2W

Length :

10.4mm

Factory Lead Time :

8 Weeks

REACH SVHC :

No SVHC

Collector Emitter Saturation Voltage :

2V

Collector Base Voltage (VCBO) :

100V

Number of Terminations :

3

JESD-609 Code :

e3

Contact Plating :

Tin

Mount :

Through Hole

JEDEC-95 Code :

TO-220AB

Polarity :

NPN

Voltage - Rated DC :

100V

Weight :

6.000006g

Operating Temperature :

150°C TJ

Transistor Type :

NPN - Darlington

Collector Emitter Breakdown Voltage :

100V

Max Power Dissipation :

80W

Collector Emitter Voltage (VCEO) :

100V

Radiation Hardening :

No

Packaging :

Tube

Lead Free :

Lead Free

Element Configuration :

Single

ECCN Code :

EAR99

Height :

9.15mm

Transistor Application :

SWITCHING

Pin Count :

3

Current Rating :

8A

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 4V

Max Collector Current :

8A

Mounting Type :

Through Hole

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Transistor Element Material :

SILICON

Number of Elements :

1

Package / Case :

TO-220-3

hFE Min :

200

Current - Collector Cutoff (Max) :

50μA

RoHS Status :

ROHS3 Compliant