TIP101
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- Mfr.Part #
- TIP101
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 8A TO220
- Stock
- 14,775
- In Stock ：
- 14,775
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Surface Mount :
- No
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Number of Pins :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Max Power Dissipation :
- 2W
- Base Part Number :
- TIP10*
- Collector Emitter Breakdown Voltage :
- 80V
- Collector Emitter Saturation Voltage :
- 2V
- Collector Base Voltage (VCBO) :
- 80V
- Packaging :
- Tube
- Voltage - Rated DC :
- 80V
- Package / Case :
- TO-220-3
- Terminal Finish :
- Tin (Sn)
- Height :
- 6.35mm
- Max Collector Current :
- 8A
- Operating Temperature :
- -65°C~150°C TJ
- JESD-609 Code :
- e3
- Factory Lead Time :
- 2 Weeks
- Weight :
- 4.535924g
- Peak Reflow Temperature (Cel) :
- 260
- Current Rating :
- 8A
- Polarity :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Application :
- AMPLIFIER
- Case Connection :
- COLLECTOR
- ECCN Code :
- EAR99
- Published :
- 2000
- Length :
- 6.35mm
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Type :
- NPN - Darlington
- Number of Elements :
- 1
- Time@Peak Reflow Temperature-Max (s) :
- 40
- hFE Min :
- 200
- Pbfree Code :
- yes
- Element Configuration :
- Single
- Power Dissipation :
- 80W
- Mounting Type :
- Through Hole
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Current - Collector Cutoff (Max) :
- 50μA
- Width :
- 25.4mm
- REACH SVHC :
- No SVHC
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- JEDEC-95 Code :
- TO-220AB
- Radiation Hardening :
- No
- Datasheets
- TIP101
TIP101 Documents
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP101G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.
TIP101G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP101G Applications
There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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|---|---|---|---|
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| TIP100 | onsemi | 759 | TRANS NPN DARL 60V 8A TO220-3 |
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| TIP101 | onsemi | 1,002 | TRANS NPN DARL 80V 8A TO220-3 |
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| TIP101-BP | onsemi | 35,203 | TRANS NPN DARL 80V 8A TO220AB |
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| TIP102 | onsemi | 37,346 | TRANS NPN DARL 100V 8A TO220AB |
| TIP102 | onsemi | 25,624 | TRANS NPN DARL 100V 8A TO220 |
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