TIP101
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- Mfr.Part #
- TIP101
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 8A TO220-3
- Stock
- 1,002
- In Stock ：
- 1,002
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Voltage (VCEO) :
- 80V
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 3
- Height :
- 6.35mm
- Max Collector Current :
- 8A
- hFE Min :
- 200
- Length :
- 6.35mm
- Number of Pins :
- 3
- Polarity :
- NPN
- Packaging :
- Tube
- Peak Reflow Temperature (Cel) :
- 260
- Surface Mount :
- No
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- Emitter Base Voltage (VEBO) :
- 5V
- Width :
- 25.4mm
- Collector Emitter Breakdown Voltage :
- 80V
- Weight :
- 4.535924g
- Power Dissipation :
- 80W
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Case Connection :
- COLLECTOR
- Transistor Type :
- NPN - Darlington
- Max Power Dissipation :
- 2W
- Factory Lead Time :
- 2 Weeks
- Terminal Finish :
- Tin (Sn)
- Element Configuration :
- Single
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 50μA
- Current Rating :
- 8A
- Collector Emitter Saturation Voltage :
- 2V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Elements :
- 1
- JEDEC-95 Code :
- TO-220AB
- Pbfree Code :
- yes
- Base Part Number :
- TIP10*
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Voltage - Rated DC :
- 80V
- Published :
- 2000
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Datasheets
- TIP101
TIP101 Documents
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP101G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.
TIP101G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP101G Applications
There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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