TIP101
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- Mfr.Part #
- TIP101
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 8A TO220-3
- Stock
- 1,002
- In Stock ：
- 1,002
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- RoHS Status :
- ROHS3 Compliant
- Polarity :
- NPN
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Width :
- 25.4mm
- Terminal Finish :
- Tin (Sn)
- Length :
- 6.35mm
- Collector Emitter Saturation Voltage :
- 2V
- Transistor Application :
- AMPLIFIER
- Case Connection :
- COLLECTOR
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN - Darlington
- Current Rating :
- 8A
- Number of Pins :
- 3
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Packaging :
- Tube
- Element Configuration :
- Single
- hFE Min :
- 200
- Voltage - Rated DC :
- 80V
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 2W
- Published :
- 2000
- Collector Emitter Voltage (VCEO) :
- 80V
- ECCN Code :
- EAR99
- Lead Free :
- Lead Free
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 80V
- Weight :
- 4.535924g
- Peak Reflow Temperature (Cel) :
- 260
- Operating Temperature :
- -65°C~150°C TJ
- JESD-609 Code :
- e3
- Surface Mount :
- No
- Height :
- 6.35mm
- Factory Lead Time :
- 2 Weeks
- Max Collector Current :
- 8A
- Collector Emitter Breakdown Voltage :
- 80V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Power Dissipation :
- 80W
- Transistor Element Material :
- SILICON
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Base Part Number :
- TIP10*
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3
- Current - Collector Cutoff (Max) :
- 50μA
- Datasheets
- TIP101
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP101G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.
TIP101G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP101G Applications
There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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