TIP101
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- Mfr.Part #
- TIP101
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 8A TO220-3
- Stock
- 1,002
- In Stock ：
- 1,002
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Max Collector Current :
- 8A
- Collector Base Voltage (VCBO) :
- 80V
- Collector Emitter Saturation Voltage :
- 2V
- Package / Case :
- TO-220-3
- hFE Min :
- 200
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 2 Weeks
- Transistor Application :
- AMPLIFIER
- Number of Pins :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Base Part Number :
- TIP10*
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- NPN
- Current Rating :
- 8A
- Transistor Type :
- NPN - Darlington
- Pin Count :
- 3
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Number of Terminations :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JEDEC-95 Code :
- TO-220AB
- Published :
- 2000
- Height :
- 6.35mm
- Power Dissipation :
- 80W
- Lead Free :
- Lead Free
- Current - Collector Cutoff (Max) :
- 50μA
- Width :
- 25.4mm
- Length :
- 6.35mm
- Collector Emitter Breakdown Voltage :
- 80V
- Peak Reflow Temperature (Cel) :
- 260
- Number of Elements :
- 1
- Surface Mount :
- No
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- -65°C~150°C TJ
- Voltage - Rated DC :
- 80V
- JESD-609 Code :
- e3
- Weight :
- 4.535924g
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 80V
- Case Connection :
- COLLECTOR
- Max Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Emitter Base Voltage (VEBO) :
- 5V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Terminal Finish :
- Tin (Sn)
- Datasheets
- TIP101
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP101G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.
TIP101G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP101G Applications
There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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