TIP101
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- Mfr.Part #
- TIP101
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 8A TO220-3
- Stock
- 1,002
- In Stock ：
- 1,002
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Collector Base Voltage (VCBO) :
- 80V
- Number of Pins :
- 3
- Length :
- 6.35mm
- Voltage - Rated DC :
- 80V
- Case Connection :
- COLLECTOR
- Weight :
- 4.535924g
- Operating Temperature :
- -65°C~150°C TJ
- Power Dissipation :
- 80W
- Base Part Number :
- TIP10*
- Transistor Element Material :
- SILICON
- Published :
- 2000
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Height :
- 6.35mm
- Current Rating :
- 8A
- Transistor Application :
- AMPLIFIER
- Max Power Dissipation :
- 2W
- Collector Emitter Breakdown Voltage :
- 80V
- Radiation Hardening :
- No
- JEDEC-95 Code :
- TO-220AB
- Emitter Base Voltage (VEBO) :
- 5V
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Factory Lead Time :
- 2 Weeks
- Polarity :
- NPN
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 200
- Current - Collector Cutoff (Max) :
- 50μA
- Number of Elements :
- 1
- Max Collector Current :
- 8A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Saturation Voltage :
- 2V
- Width :
- 25.4mm
- Collector Emitter Voltage (VCEO) :
- 80V
- Transistor Type :
- NPN - Darlington
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3
- Surface Mount :
- No
- Pin Count :
- 3
- Packaging :
- Tube
- Datasheets
- TIP101
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP101G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.
TIP101G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP101G Applications
There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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