TIP101
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- Mfr.Part #
- TIP101
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 8A TO220-3
- Stock
- 1,002
- In Stock ：
- 1,002
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Factory Lead Time :
- 2 Weeks
- Package / Case :
- TO-220-3
- Terminal Finish :
- Tin (Sn)
- Polarity :
- NPN
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Pbfree Code :
- yes
- Width :
- 25.4mm
- ECCN Code :
- EAR99
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Current Rating :
- 8A
- Element Configuration :
- Single
- Transistor Type :
- NPN - Darlington
- Published :
- 2000
- JESD-609 Code :
- e3
- Packaging :
- Tube
- Height :
- 6.35mm
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Transistor Element Material :
- SILICON
- Number of Elements :
- 1
- Max Collector Current :
- 8A
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- TIP10*
- Collector Emitter Breakdown Voltage :
- 80V
- Length :
- 6.35mm
- Surface Mount :
- No
- Peak Reflow Temperature (Cel) :
- 260
- Power Dissipation :
- 80W
- Voltage - Rated DC :
- 80V
- Operating Temperature :
- -65°C~150°C TJ
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Base Voltage (VCBO) :
- 80V
- Current - Collector Cutoff (Max) :
- 50μA
- hFE Min :
- 200
- Max Power Dissipation :
- 2W
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 2V
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- REACH SVHC :
- No SVHC
- Collector Emitter Voltage (VCEO) :
- 80V
- JEDEC-95 Code :
- TO-220AB
- Weight :
- 4.535924g
- Datasheets
- TIP101
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP101G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.
TIP101G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP101G Applications
There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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