TIP101
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- Mfr.Part #
- TIP101
- Manufacturer
- NTE Electronics, Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 80V 8A TO220-3
- Stock
- 1,002
- In Stock ：
- 1,002
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- Manufacturer :
- NTE Electronics, Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Pins :
- 3
- Current Rating :
- 8A
- Case Connection :
- COLLECTOR
- Height :
- 6.35mm
- Transistor Application :
- AMPLIFIER
- Width :
- 25.4mm
- Collector Emitter Breakdown Voltage :
- 80V
- Max Collector Current :
- 8A
- ECCN Code :
- EAR99
- REACH SVHC :
- No SVHC
- Element Configuration :
- Single
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Transistor Element Material :
- SILICON
- Terminal Finish :
- Tin (Sn)
- Collector Emitter Voltage (VCEO) :
- 80V
- Weight :
- 4.535924g
- Number of Terminations :
- 3
- Radiation Hardening :
- No
- Collector Emitter Saturation Voltage :
- 2V
- Mounting Type :
- Through Hole
- JEDEC-95 Code :
- TO-220AB
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- NPN - Darlington
- Factory Lead Time :
- 2 Weeks
- Power Dissipation :
- 80W
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Lifecycle Status :
- ACTIVE (Last Updated: 1 week ago)
- Emitter Base Voltage (VEBO) :
- 5V
- Package / Case :
- TO-220-3
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 50μA
- Published :
- 2000
- Polarity :
- NPN
- Max Power Dissipation :
- 2W
- Surface Mount :
- No
- Operating Temperature :
- -65°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- hFE Min :
- 200
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 80V
- Base Part Number :
- TIP10*
- Collector Base Voltage (VCBO) :
- 80V
- Length :
- 6.35mm
- Packaging :
- Tube
- Datasheets
- TIP101
TIP101 Documents
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP101G Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.
TIP101G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP101G Applications
There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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