TIP100
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- Mfr.Part #
- TIP100
- Manufacturer
- Harris Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220-3
- Stock
- 759
- In Stock ：
- 759
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Weight :
- 4.535924g
- Width :
- 25.4mm
- Transistor Type :
- NPN - Darlington
- Voltage - Rated DC :
- 60V
- Height :
- 6.35mm
- RoHS Status :
- ROHS3 Compliant
- Factory Lead Time :
- 2 Weeks
- Max Collector Current :
- 8A
- Collector Base Voltage (VCBO) :
- 60V
- Packaging :
- Tube
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Pin Count :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 60V
- Collector Emitter Saturation Voltage :
- 2V
- Case Connection :
- COLLECTOR
- Operating Temperature :
- -65°C~150°C TJ
- Base Part Number :
- TIP10*
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Lead Free :
- Lead Free
- Current Rating :
- 8A
- Max Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- 5V
- Surface Mount :
- No
- Collector Emitter Voltage (VCEO) :
- 60V
- hFE Min :
- 200
- Continuous Collector Current :
- 4A
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Power Dissipation :
- 40W
- Package / Case :
- TO-220-3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Transistor Application :
- AMPLIFIER
- REACH SVHC :
- No SVHC
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- JEDEC-95 Code :
- TO-220AB
- Contact Plating :
- Tin
- Current - Collector Cutoff (Max) :
- 50μA
- Polarity :
- NPN
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Length :
- 6.35mm
- Peak Reflow Temperature (Cel) :
- 260
- Published :
- 2001
- ECCN Code :
- EAR99
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Number of Pins :
- 3
- Datasheets
- TIP100
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP100G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP100G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP100G Applications
There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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