TIP100
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- Mfr.Part #
- TIP100
- Manufacturer
- Harris Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220-3
- Stock
- 759
- In Stock ：
- 759
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Number of Terminations :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Surface Mount :
- No
- Collector Emitter Breakdown Voltage :
- 60V
- Voltage - Rated DC :
- 60V
- Collector Emitter Saturation Voltage :
- 2V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 6.35mm
- Collector Emitter Voltage (VCEO) :
- 60V
- Transistor Application :
- AMPLIFIER
- hFE Min :
- 200
- Mounting Type :
- Through Hole
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Package / Case :
- TO-220-3
- Collector Base Voltage (VCBO) :
- 60V
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- RoHS Status :
- ROHS3 Compliant
- Lead Free :
- Lead Free
- Case Connection :
- COLLECTOR
- Number of Pins :
- 3
- Continuous Collector Current :
- 4A
- Max Power Dissipation :
- 2W
- Transistor Type :
- NPN - Darlington
- Transistor Element Material :
- SILICON
- Published :
- 2001
- Packaging :
- Tube
- Current - Collector Cutoff (Max) :
- 50μA
- JEDEC-95 Code :
- TO-220AB
- Element Configuration :
- Single
- ECCN Code :
- EAR99
- Length :
- 6.35mm
- Pin Count :
- 3
- REACH SVHC :
- No SVHC
- Polarity :
- NPN
- Factory Lead Time :
- 2 Weeks
- Current Rating :
- 8A
- Operating Temperature :
- -65°C~150°C TJ
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Pbfree Code :
- yes
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Width :
- 25.4mm
- Max Collector Current :
- 8A
- Base Part Number :
- TIP10*
- Weight :
- 4.535924g
- Power Dissipation :
- 40W
- Datasheets
- TIP100
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP100G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP100G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP100G Applications
There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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