TIP100
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- Mfr.Part #
- TIP100
- Manufacturer
- Harris Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220-3
- Stock
- 759
- In Stock ：
- 759
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pbfree Code :
- yes
- Voltage - Rated DC :
- 60V
- Collector Emitter Breakdown Voltage :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Element Configuration :
- Single
- Current Rating :
- 8A
- REACH SVHC :
- No SVHC
- Max Collector Current :
- 8A
- Length :
- 6.35mm
- Max Power Dissipation :
- 2W
- Transistor Type :
- NPN - Darlington
- Lead Free :
- Lead Free
- Number of Terminations :
- 3
- ECCN Code :
- EAR99
- Width :
- 25.4mm
- Height :
- 6.35mm
- Collector Emitter Voltage (VCEO) :
- 60V
- Published :
- 2001
- Peak Reflow Temperature (Cel) :
- 260
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- JEDEC-95 Code :
- TO-220AB
- Pin Count :
- 3
- Polarity :
- NPN
- Factory Lead Time :
- 2 Weeks
- Base Part Number :
- TIP10*
- Mounting Type :
- Through Hole
- Contact Plating :
- Tin
- Power Dissipation :
- 40W
- Collector Base Voltage (VCBO) :
- 60V
- Case Connection :
- COLLECTOR
- Weight :
- 4.535924g
- Package / Case :
- TO-220-3
- Collector Emitter Saturation Voltage :
- 2V
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 200
- Packaging :
- Tube
- Continuous Collector Current :
- 4A
- Surface Mount :
- No
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Current - Collector Cutoff (Max) :
- 50μA
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Transistor Element Material :
- SILICON
- Radiation Hardening :
- No
- Operating Temperature :
- -65°C~150°C TJ
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Number of Elements :
- 1
- Datasheets
- TIP100
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP100G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP100G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP100G Applications
There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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