TIP100
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- Mfr.Part #
- TIP100
- Manufacturer
- Harris Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220-3
- Stock
- 759
- In Stock ：
- 759
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Lead Free :
- Lead Free
- Factory Lead Time :
- 2 Weeks
- Max Collector Current :
- 8A
- Voltage - Rated DC :
- 60V
- RoHS Status :
- ROHS3 Compliant
- Transistor Type :
- NPN - Darlington
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Peak Reflow Temperature (Cel) :
- 260
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Mounting Type :
- Through Hole
- Number of Elements :
- 1
- Published :
- 2001
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Collector Emitter Breakdown Voltage :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Current - Collector Cutoff (Max) :
- 50μA
- Packaging :
- Tube
- Number of Pins :
- 3
- Height :
- 6.35mm
- JESD-609 Code :
- e3
- Length :
- 6.35mm
- hFE Min :
- 200
- Width :
- 25.4mm
- Current Rating :
- 8A
- Polarity :
- NPN
- Collector Emitter Voltage (VCEO) :
- 60V
- Pin Count :
- 3
- Case Connection :
- COLLECTOR
- Transistor Element Material :
- SILICON
- Surface Mount :
- No
- Contact Plating :
- Tin
- Base Part Number :
- TIP10*
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- JEDEC-95 Code :
- TO-220AB
- Weight :
- 4.535924g
- Collector Base Voltage (VCBO) :
- 60V
- REACH SVHC :
- No SVHC
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Max Power Dissipation :
- 2W
- Package / Case :
- TO-220-3
- Operating Temperature :
- -65°C~150°C TJ
- Continuous Collector Current :
- 4A
- ECCN Code :
- EAR99
- Collector Emitter Saturation Voltage :
- 2V
- Number of Terminations :
- 3
- Power Dissipation :
- 40W
- Datasheets
- TIP100
TIP100 Documents
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP100G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP100G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP100G Applications
There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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