TIP100
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- Mfr.Part #
- TIP100
- Manufacturer
- Harris Corporation
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220-3
- Stock
- 759
- In Stock ：
- 759
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- Manufacturer :
- Harris Corporation
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Pin Count :
- 3
- Lead Free :
- Lead Free
- Number of Elements :
- 1
- Factory Lead Time :
- 2 Weeks
- Current - Collector Cutoff (Max) :
- 50μA
- Collector Emitter Voltage (VCEO) :
- 60V
- Length :
- 6.35mm
- Mounting Type :
- Through Hole
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- hFE Min :
- 200
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Case Connection :
- COLLECTOR
- Continuous Collector Current :
- 4A
- Voltage - Rated DC :
- 60V
- Transistor Type :
- NPN - Darlington
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Max Collector Current :
- 8A
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Number of Pins :
- 3
- JESD-609 Code :
- e3
- Operating Temperature :
- -65°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Terminations :
- 3
- Element Configuration :
- Single
- Current Rating :
- 8A
- Published :
- 2001
- Collector Emitter Saturation Voltage :
- 2V
- Power Dissipation :
- 40W
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Height :
- 6.35mm
- Max Power Dissipation :
- 2W
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Transistor Application :
- AMPLIFIER
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- TIP10*
- Width :
- 25.4mm
- Weight :
- 4.535924g
- Contact Plating :
- Tin
- Collector Emitter Breakdown Voltage :
- 60V
- Surface Mount :
- No
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Polarity :
- NPN
- REACH SVHC :
- No SVHC
- Collector Base Voltage (VCBO) :
- 60V
- Datasheets
- TIP100
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP100G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP100G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP100G Applications
There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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