TIP100
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- Mfr.Part #
- TIP100
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220
- Stock
- 759
- In Stock ：
- 759
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Element Configuration :
- Single
- Mounting Type :
- Through Hole
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e3
- Polarity :
- NPN
- Packaging :
- Tube
- Collector Emitter Voltage (VCEO) :
- 60V
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 50μA
- Base Part Number :
- TIP10*
- Contact Plating :
- Tin
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Collector Emitter Saturation Voltage :
- 2V
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Lead Free :
- Lead Free
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- REACH SVHC :
- No SVHC
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Peak Reflow Temperature (Cel) :
- 260
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- hFE Min :
- 200
- Max Collector Current :
- 8A
- Continuous Collector Current :
- 4A
- Height :
- 6.35mm
- Transistor Type :
- NPN - Darlington
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Power Dissipation :
- 40W
- Max Power Dissipation :
- 2W
- ECCN Code :
- EAR99
- Pbfree Code :
- yes
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Breakdown Voltage :
- 60V
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Case Connection :
- COLLECTOR
- Weight :
- 4.535924g
- Voltage - Rated DC :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Current Rating :
- 8A
- Radiation Hardening :
- No
- Package / Case :
- TO-220-3
- Published :
- 2001
- Length :
- 6.35mm
- Width :
- 25.4mm
- Operating Temperature :
- -65°C~150°C TJ
- Surface Mount :
- No
- Datasheets
- TIP100
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP100G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP100G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP100G Applications
There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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