TIP100
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- Mfr.Part #
- TIP100
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 5A TO220F
- Stock
- 759
- In Stock ：
- 759
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Polarity :
- NPN
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Width :
- 25.4mm
- ECCN Code :
- EAR99
- Number of Pins :
- 3
- Length :
- 6.35mm
- Voltage - Rated DC :
- 60V
- Transistor Application :
- AMPLIFIER
- Pin Count :
- 3
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Collector Emitter Breakdown Voltage :
- 60V
- Packaging :
- Tube
- Height :
- 6.35mm
- Current - Collector Cutoff (Max) :
- 50μA
- Weight :
- 4.535924g
- Collector Base Voltage (VCBO) :
- 60V
- Published :
- 2001
- Transistor Element Material :
- SILICON
- Base Part Number :
- TIP10*
- Package / Case :
- TO-220-3
- Number of Terminations :
- 3
- Collector Emitter Voltage (VCEO) :
- 60V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Current Rating :
- 8A
- Max Collector Current :
- 8A
- hFE Min :
- 200
- Case Connection :
- COLLECTOR
- Contact Plating :
- Tin
- RoHS Status :
- ROHS3 Compliant
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Surface Mount :
- No
- Max Power Dissipation :
- 2W
- JESD-609 Code :
- e3
- REACH SVHC :
- No SVHC
- JEDEC-95 Code :
- TO-220AB
- Power Dissipation :
- 40W
- Operating Temperature :
- -65°C~150°C TJ
- Number of Elements :
- 1
- Element Configuration :
- Single
- Collector Emitter Saturation Voltage :
- 2V
- Pbfree Code :
- yes
- Factory Lead Time :
- 2 Weeks
- Radiation Hardening :
- No
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- 260
- Continuous Collector Current :
- 4A
- Lead Free :
- Lead Free
- Emitter Base Voltage (VEBO) :
- 5V
- Datasheets
- TIP100
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP100G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP100G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP100G Applications
There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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