TIP101G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Package / Case :

TO-220-3

Width :

25.4mm

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single

Power Dissipation :

80W

Mounting Type :

Through Hole

Collector Base Voltage (VCBO) :

80V

Height :

6.35mm

Max Power Dissipation :

2W

Collector Emitter Saturation Voltage :

2V

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 80mA, 8A

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Type :

NPN - Darlington

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 4V

Case Connection :

COLLECTOR

Packaging :

Tube

Transistor Application :

AMPLIFIER

Factory Lead Time :

2 Weeks

Peak Reflow Temperature (Cel) :

260

Current - Collector Cutoff (Max) :

50μA

Number of Elements :

1

Surface Mount :

No

Number of Pins :

3

Collector Emitter Breakdown Voltage :

80V

Current Rating :

8A

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Terminal Finish :

Tin (Sn)

Published :

2000

ECCN Code :

EAR99

Radiation Hardening :

No

Pbfree Code :

yes

Emitter Base Voltage (VEBO) :

5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Voltage - Rated DC :

80V

Pin Count :

3

Base Part Number :

TIP10*

Polarity :

NPN

Number of Terminations :

3

Collector Emitter Voltage (VCEO) :

80V

Weight :

4.535924g

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Lead Free :

Lead Free

JEDEC-95 Code :

TO-220AB

REACH SVHC :

No SVHC

Length :

6.35mm

Operating Temperature :

-65°C~150°C TJ

Max Collector Current :

8A

hFE Min :

200