TIP101G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Collector Emitter Breakdown Voltage :

80V

Surface Mount :

No

Height :

6.35mm

Collector Emitter Voltage (VCEO) :

80V

Peak Reflow Temperature (Cel) :

260

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Collector Emitter Saturation Voltage :

2V

Current - Collector Cutoff (Max) :

50μA

JESD-609 Code :

e3

Radiation Hardening :

No

hFE Min :

200

Package / Case :

TO-220-3

Lead Free :

Lead Free

Collector Base Voltage (VCBO) :

80V

Power Dissipation :

80W

Element Configuration :

Single

Published :

2000

Transistor Element Material :

SILICON

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 80mA, 8A

Weight :

4.535924g

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Length :

6.35mm

Voltage - Rated DC :

80V

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-65°C~150°C TJ

Base Part Number :

TIP10*

Max Collector Current :

8A

REACH SVHC :

No SVHC

Number of Pins :

3

Case Connection :

COLLECTOR

Number of Terminations :

3

JEDEC-95 Code :

TO-220AB

Max Power Dissipation :

2W

Number of Elements :

1

ECCN Code :

EAR99

Emitter Base Voltage (VEBO) :

5V

Polarity :

NPN

Pbfree Code :

yes

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 4V

Current Rating :

8A

Pin Count :

3

Transistor Application :

AMPLIFIER

Terminal Finish :

Tin (Sn)

Packaging :

Tube

Factory Lead Time :

2 Weeks

Transistor Type :

NPN - Darlington

Width :

25.4mm

Mounting Type :

Through Hole