TIP101G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Max Power Dissipation :

2W

Power Dissipation :

80W

Vce Saturation (Max) @ Ib, Ic :

2.5V @ 80mA, 8A

Case Connection :

COLLECTOR

JESD-609 Code :

e3

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Published :

2000

Factory Lead Time :

2 Weeks

Package / Case :

TO-220-3

Lifecycle Status :

ACTIVE (Last Updated: 1 week ago)

Element Configuration :

Single

Voltage - Rated DC :

80V

Number of Pins :

3

Width :

25.4mm

Collector Base Voltage (VCBO) :

80V

Pbfree Code :

yes

Operating Temperature :

-65°C~150°C TJ

Collector Emitter Voltage (VCEO) :

80V

Current Rating :

8A

Transistor Application :

AMPLIFIER

Height :

6.35mm

Mounting Type :

Through Hole

hFE Min :

200

Time@Peak Reflow Temperature-Max (s) :

40

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 4V

Weight :

4.535924g

Base Part Number :

TIP10*

Surface Mount :

No

Emitter Base Voltage (VEBO) :

5V

Radiation Hardening :

No

Max Collector Current :

8A

Number of Terminations :

3

Number of Elements :

1

Terminal Finish :

Tin (Sn)

Pin Count :

3

RoHS Status :

ROHS3 Compliant

Collector Emitter Saturation Voltage :

2V

Current - Collector Cutoff (Max) :

50μA

Collector Emitter Breakdown Voltage :

80V

Length :

6.35mm

Polarity :

NPN

Lead Free :

Lead Free

Packaging :

Tube

Peak Reflow Temperature (Cel) :

260

Transistor Type :

NPN - Darlington

Transistor Element Material :

SILICON