TIP101G

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Mfr.Part #
TIP101G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 8A TO220
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN - Darlington
Length :
6.35mm
Height :
6.35mm
Transistor Element Material :
SILICON
JEDEC-95 Code :
TO-220AB
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
Polarity :
NPN
Width :
25.4mm
Weight :
4.535924g
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 80mA, 8A
Operating Temperature :
-65°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Surface Mount :
No
Peak Reflow Temperature (Cel) :
260
Number of Pins :
3
Mounting Type :
Through Hole
Collector Base Voltage (VCBO) :
80V
Lead Free :
Lead Free
Factory Lead Time :
2 Weeks
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 3A 4V
ECCN Code :
EAR99
Emitter Base Voltage (VEBO) :
5V
Time@Peak Reflow Temperature-Max (s) :
40
Current - Collector Cutoff (Max) :
50μA
Number of Terminations :
3
Max Collector Current :
8A
Pin Count :
3
Current Rating :
8A
Collector Emitter Voltage (VCEO) :
80V
Collector Emitter Breakdown Voltage :
80V
Published :
2000
Element Configuration :
Single
hFE Min :
200
JESD-609 Code :
e3
REACH SVHC :
No SVHC
Case Connection :
COLLECTOR
Collector Emitter Saturation Voltage :
2V
Base Part Number :
TIP10*
Pbfree Code :
yes
Voltage - Rated DC :
80V
Terminal Finish :
Tin (Sn)
RoHS Status :
ROHS3 Compliant
Max Power Dissipation :
2W
Transistor Application :
AMPLIFIER
Package / Case :
TO-220-3
Packaging :
Tube
Radiation Hardening :
No
Power Dissipation :
80W
Number of Elements :
1
Datasheets
TIP101G
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP101G from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-65°C~150°C TJ, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, Base Part Number:TIP10*, Package / Case:TO-220-3, TIP101G pinout, TIP101G datasheet PDF, TIP101G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP101G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP101G


NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP101G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.

TIP101G Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A


TIP101G Applications


There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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