TIP101G

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Mfr.Part #
TIP101G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 80V 8A TO220
Stock
1
In Stock :
1

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Max Collector Current :
8A
Number of Pins :
3
Pbfree Code :
yes
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 80mA, 8A
Current - Collector Cutoff (Max) :
50μA
RoHS Status :
ROHS3 Compliant
Packaging :
Tube
Peak Reflow Temperature (Cel) :
260
hFE Min :
200
Lead Free :
Lead Free
Surface Mount :
No
ECCN Code :
EAR99
Published :
2000
Max Power Dissipation :
2W
Current Rating :
8A
Collector Emitter Breakdown Voltage :
80V
JEDEC-95 Code :
TO-220AB
Emitter Base Voltage (VEBO) :
5V
Pin Count :
3
Transistor Element Material :
SILICON
Transistor Application :
AMPLIFIER
Collector Emitter Voltage (VCEO) :
80V
Width :
25.4mm
Polarity :
NPN
Package / Case :
TO-220-3
Number of Elements :
1
Element Configuration :
Single
Collector Base Voltage (VCBO) :
80V
Height :
6.35mm
Power Dissipation :
80W
Mounting Type :
Through Hole
Radiation Hardening :
No
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 3A 4V
Lifecycle Status :
ACTIVE (Last Updated: 1 week ago)
JESD-609 Code :
e3
Time@Peak Reflow Temperature-Max (s) :
40
Length :
6.35mm
Transistor Type :
NPN - Darlington
Voltage - Rated DC :
80V
Base Part Number :
TIP10*
Collector Emitter Saturation Voltage :
2V
Number of Terminations :
3
Factory Lead Time :
2 Weeks
Operating Temperature :
-65°C~150°C TJ
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Terminal Finish :
Tin (Sn)
Weight :
4.535924g
REACH SVHC :
No SVHC
Case Connection :
COLLECTOR
Datasheets
TIP101G
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP101G from Chip IC,where excellence meets affordability. This product stands out with its Number of Pins:3, Package / Case:TO-220-3, Mounting Type:Through Hole, Base Part Number:TIP10*, Number of Terminations:3, Operating Temperature:-65°C~150°C TJ, TIP101G pinout, TIP101G datasheet PDF, TIP101G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP101G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP101G


NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP101G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 1000 @ 3A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 80mA, 8A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 5V.Its current rating is 8A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.During maximum operation, collector current can be as low as 8A volts.

TIP101G Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A


TIP101G Applications


There are a lot of ON Semiconductor
TIP101G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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