TIP100G

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Mfr.Part #
TIP100G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 60V 8A TO220
Stock
10,453
In Stock :
10,453

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Current Rating :
8A
Mounting Type :
Through Hole
Lifecycle Status :
ACTIVE (Last Updated: 14 hours ago)
Collector Emitter Voltage (VCEO) :
60V
Number of Elements :
1
Collector Emitter Breakdown Voltage :
60V
Contact Plating :
Tin
Peak Reflow Temperature (Cel) :
260
Pin Count :
3
Collector Base Voltage (VCBO) :
60V
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 3A 4V
Polarity :
NPN
Length :
6.35mm
Max Power Dissipation :
2W
Packaging :
Tube
Case Connection :
COLLECTOR
Element Configuration :
Single
Power Dissipation :
40W
Factory Lead Time :
2 Weeks
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 80mA, 8A
Time@Peak Reflow Temperature-Max (s) :
40
Pbfree Code :
yes
Published :
2001
Voltage - Rated DC :
60V
ECCN Code :
EAR99
Package / Case :
TO-220-3
Operating Temperature :
-65°C~150°C TJ
Collector Emitter Saturation Voltage :
2V
Height :
6.35mm
Surface Mount :
No
Number of Terminations :
3
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Max Collector Current :
8A
RoHS Status :
ROHS3 Compliant
Continuous Collector Current :
4A
JEDEC-95 Code :
TO-220AB
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Base Part Number :
TIP10*
Lead Free :
Lead Free
Weight :
4.535924g
Emitter Base Voltage (VEBO) :
5V
Number of Pins :
3
Current - Collector Cutoff (Max) :
50μA
REACH SVHC :
No SVHC
Transistor Type :
NPN - Darlington
hFE Min :
200
Width :
25.4mm
Radiation Hardening :
No
Transistor Application :
AMPLIFIER
Datasheets
TIP100G
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP100G from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Through Hole, Package / Case:TO-220-3, Operating Temperature:-65°C~150°C TJ, Number of Terminations:3, Base Part Number:TIP10*, Number of Pins:3, TIP100G pinout, TIP100G datasheet PDF, TIP100G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP100G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP100G


NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP100G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.

TIP100G Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A


TIP100G Applications


There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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