TIP100G
- Mfr.Part #
- TIP100G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220
- Stock
- 10,453
- In Stock :
- 10,453
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Current Rating :
- 8A
- Mounting Type :
- Through Hole
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Collector Emitter Voltage (VCEO) :
- 60V
- Number of Elements :
- 1
- Collector Emitter Breakdown Voltage :
- 60V
- Contact Plating :
- Tin
- Peak Reflow Temperature (Cel) :
- 260
- Pin Count :
- 3
- Collector Base Voltage (VCBO) :
- 60V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Polarity :
- NPN
- Length :
- 6.35mm
- Max Power Dissipation :
- 2W
- Packaging :
- Tube
- Case Connection :
- COLLECTOR
- Element Configuration :
- Single
- Power Dissipation :
- 40W
- Factory Lead Time :
- 2 Weeks
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Pbfree Code :
- yes
- Published :
- 2001
- Voltage - Rated DC :
- 60V
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3
- Operating Temperature :
- -65°C~150°C TJ
- Collector Emitter Saturation Voltage :
- 2V
- Height :
- 6.35mm
- Surface Mount :
- No
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Transistor Element Material :
- SILICON
- Max Collector Current :
- 8A
- RoHS Status :
- ROHS3 Compliant
- Continuous Collector Current :
- 4A
- JEDEC-95 Code :
- TO-220AB
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- TIP10*
- Lead Free :
- Lead Free
- Weight :
- 4.535924g
- Emitter Base Voltage (VEBO) :
- 5V
- Number of Pins :
- 3
- Current - Collector Cutoff (Max) :
- 50μA
- REACH SVHC :
- No SVHC
- Transistor Type :
- NPN - Darlington
- hFE Min :
- 200
- Width :
- 25.4mm
- Radiation Hardening :
- No
- Transistor Application :
- AMPLIFIER
- Datasheets
- TIP100G

NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP100G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP100G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP100G Applications
There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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