TIP100G

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Mfr.Part #
TIP100G
Manufacturer
onsemi
Package / Case
TO-220-3
Datasheet
Download
Description
TRANS NPN DARL 60V 8A TO220
Stock
10,453
In Stock :
10,453

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Manufacturer :
onsemi
Product Category :
Transistors - Bipolar (BJT) - Single
Transistor Type :
NPN - Darlington
Surface Mount :
No
Lead Free :
Lead Free
Base Part Number :
TIP10*
Current - Collector Cutoff (Max) :
50μA
Length :
6.35mm
Pbfree Code :
yes
JEDEC-95 Code :
TO-220AB
Lifecycle Status :
ACTIVE (Last Updated: 14 hours ago)
Peak Reflow Temperature (Cel) :
260
Height :
6.35mm
Polarity :
NPN
Packaging :
Tube
JESD-609 Code :
e3
Published :
2001
Collector Emitter Saturation Voltage :
2V
Transistor Application :
AMPLIFIER
Collector Emitter Voltage (VCEO) :
60V
Power Dissipation :
40W
Collector Emitter Breakdown Voltage :
60V
Collector Base Voltage (VCBO) :
60V
Width :
25.4mm
Package / Case :
TO-220-3
Operating Temperature :
-65°C~150°C TJ
Continuous Collector Current :
4A
Max Collector Current :
8A
Voltage - Rated DC :
60V
Vce Saturation (Max) @ Ib, Ic :
2.5V @ 80mA, 8A
Case Connection :
COLLECTOR
REACH SVHC :
No SVHC
Transistor Element Material :
SILICON
Time@Peak Reflow Temperature-Max (s) :
40
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Emitter Base Voltage (VEBO) :
5V
Radiation Hardening :
No
Pin Count :
3
Number of Elements :
1
Weight :
4.535924g
Number of Pins :
3
Max Power Dissipation :
2W
hFE Min :
200
Factory Lead Time :
2 Weeks
ECCN Code :
EAR99
Element Configuration :
Single
Contact Plating :
Tin
Number of Terminations :
3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Current Rating :
8A
DC Current Gain (hFE) (Min) @ Ic, Vce :
1000 @ 3A 4V
Datasheets
TIP100G
Introducing Transistors - Bipolar (BJT) - Single onsemi TIP100G from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:TIP10*, Package / Case:TO-220-3, Operating Temperature:-65°C~150°C TJ, Mounting Type:Through Hole, Number of Pins:3, Number of Terminations:3, TIP100G pinout, TIP100G datasheet PDF, TIP100G amp .Beyond Transistors - Bipolar (BJT) - Single onsemi TIP100G ,we also offer BC817-40,235, BC817-40,215, BC807-40,215, Our vast inventory has you covered. Contact us now for immediate solutions.

onsemi TIP100G


NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole

TIP100G Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.

TIP100G Features


the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A


TIP100G Applications


There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.


  • Inverter
  • Interface
  • Driver
  • Muting
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