TIP100G
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- Mfr.Part #
- TIP100G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220
- Stock
- 10,453
- In Stock ：
- 10,453
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Continuous Collector Current :
- 4A
- Published :
- 2001
- Height :
- 6.35mm
- Number of Elements :
- 1
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e3
- Polarity :
- NPN
- ECCN Code :
- EAR99
- hFE Min :
- 200
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Peak Reflow Temperature (Cel) :
- 260
- Package / Case :
- TO-220-3
- Collector Base Voltage (VCBO) :
- 60V
- Current Rating :
- 8A
- Power Dissipation :
- 40W
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Emitter Base Voltage (VEBO) :
- 5V
- RoHS Status :
- ROHS3 Compliant
- Length :
- 6.35mm
- Voltage - Rated DC :
- 60V
- Max Collector Current :
- 8A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Base Part Number :
- TIP10*
- Max Power Dissipation :
- 2W
- REACH SVHC :
- No SVHC
- Contact Plating :
- Tin
- Weight :
- 4.535924g
- Collector Emitter Breakdown Voltage :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 2V
- Number of Pins :
- 3
- Transistor Type :
- NPN - Darlington
- Factory Lead Time :
- 2 Weeks
- Lead Free :
- Lead Free
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Collector Emitter Voltage (VCEO) :
- 60V
- Case Connection :
- COLLECTOR
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Number of Terminations :
- 3
- Mounting Type :
- Through Hole
- Width :
- 25.4mm
- Current - Collector Cutoff (Max) :
- 50μA
- Element Configuration :
- Single
- Radiation Hardening :
- No
- Pbfree Code :
- yes
- Surface Mount :
- No
- Operating Temperature :
- -65°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Packaging :
- Tube
- Datasheets
- TIP100G
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP100G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP100G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP100G Applications
There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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