TIP100G
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- Mfr.Part #
- TIP100G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220
- Stock
- 10,453
- In Stock ：
- 10,453
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Element Material :
- SILICON
- Collector Base Voltage (VCBO) :
- 60V
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 60V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Transistor Type :
- NPN - Darlington
- Continuous Collector Current :
- 4A
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Mounting Type :
- Through Hole
- Collector Emitter Saturation Voltage :
- 2V
- Max Collector Current :
- 8A
- Published :
- 2001
- Pin Count :
- 3
- Number of Pins :
- 3
- Width :
- 25.4mm
- Max Power Dissipation :
- 2W
- hFE Min :
- 200
- Current Rating :
- 8A
- Packaging :
- Tube
- REACH SVHC :
- No SVHC
- Voltage - Rated DC :
- 60V
- Element Configuration :
- Single
- Number of Elements :
- 1
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Length :
- 6.35mm
- Weight :
- 4.535924g
- Case Connection :
- COLLECTOR
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Package / Case :
- TO-220-3
- Base Part Number :
- TIP10*
- JESD-609 Code :
- e3
- Surface Mount :
- No
- Radiation Hardening :
- No
- Emitter Base Voltage (VEBO) :
- 5V
- Current - Collector Cutoff (Max) :
- 50μA
- Number of Terminations :
- 3
- RoHS Status :
- ROHS3 Compliant
- Power Dissipation :
- 40W
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Transistor Application :
- AMPLIFIER
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Contact Plating :
- Tin
- Height :
- 6.35mm
- Collector Emitter Breakdown Voltage :
- 60V
- Factory Lead Time :
- 2 Weeks
- Polarity :
- NPN
- JEDEC-95 Code :
- TO-220AB
- Peak Reflow Temperature (Cel) :
- 260
- Lead Free :
- Lead Free
- Datasheets
- TIP100G
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP100G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP100G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP100G Applications
There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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