TIP100G
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- Mfr.Part #
- TIP100G
- Manufacturer
- onsemi
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS NPN DARL 60V 8A TO220
- Stock
- 10,453
- In Stock ：
- 10,453
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- Manufacturer :
- onsemi
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Transistor Application :
- AMPLIFIER
- Power Dissipation :
- 40W
- Radiation Hardening :
- No
- Collector Base Voltage (VCBO) :
- 60V
- Emitter Base Voltage (VEBO) :
- 5V
- Pbfree Code :
- yes
- Element Configuration :
- Single
- JESD-609 Code :
- e3
- Package / Case :
- TO-220-3
- RoHS Status :
- ROHS3 Compliant
- ECCN Code :
- EAR99
- Factory Lead Time :
- 2 Weeks
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Packaging :
- Tube
- Collector Emitter Breakdown Voltage :
- 60V
- Operating Temperature :
- -65°C~150°C TJ
- Surface Mount :
- No
- Height :
- 6.35mm
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Case Connection :
- COLLECTOR
- Width :
- 25.4mm
- Continuous Collector Current :
- 4A
- Voltage - Rated DC :
- 60V
- Max Power Dissipation :
- 2W
- Peak Reflow Temperature (Cel) :
- 260
- Weight :
- 4.535924g
- Polarity :
- NPN
- Contact Plating :
- Tin
- REACH SVHC :
- No SVHC
- Current Rating :
- 8A
- Mounting Type :
- Through Hole
- Lead Free :
- Lead Free
- Transistor Element Material :
- SILICON
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 3A 4V
- Lifecycle Status :
- ACTIVE (Last Updated: 14 hours ago)
- Max Collector Current :
- 8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Current - Collector Cutoff (Max) :
- 50μA
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 80mA, 8A
- Collector Emitter Saturation Voltage :
- 2V
- Collector Emitter Voltage (VCEO) :
- 60V
- Pin Count :
- 3
- Transistor Type :
- NPN - Darlington
- JEDEC-95 Code :
- TO-220AB
- Length :
- 6.35mm
- hFE Min :
- 200
- Base Part Number :
- TIP10*
- Published :
- 2001
- Datasheets
- TIP100G
NPN - Darlington -65°C~150°C TJ 50μA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP100G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 4V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 2.5V @ 80mA, 8A.Single BJT transistor is recommended to keep the continuous collector voltage at 4A in order to achieve high efficiency.The emitter base voltage can be kept at 5V for high efficiency.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor is possible to have a collector current as low as 8A volts at Single BJT transistors maximum.
TIP100G Features
the DC current gain for this device is 1000 @ 3A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 2.5V @ 80mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 8A
TIP100G Applications
There are a lot of ON Semiconductor
TIP100G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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