TIP122G

Manufacturer :

onsemi

Product Category :

Transistors - Bipolar (BJT) - Single

Additional Feature :

LEADFORM OPTIONS ARE AVAILABLE

Max Power Dissipation :

2W

Packaging :

Tube

Power Dissipation :

65W

JESD-609 Code :

e3

Mounting Type :

Through Hole

Transistor Application :

AMPLIFIER

Weight :

4.535924g

Lifecycle Status :

ACTIVE (Last Updated: 1 day ago)

Width :

4.826mm

Transistor Element Material :

SILICON

Transition Frequency :

4MHz

Operating Temperature :

-65°C~150°C TJ

DC Current Gain (hFE) (Min) @ Ic, Vce :

1000 @ 3A 3V

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

RoHS Status :

ROHS3 Compliant

Collector Emitter Voltage (VCEO) :

100V

Pbfree Code :

yes

Collector Emitter Breakdown Voltage :

100V

Published :

2005

Continuous Collector Current :

5A

Vce Saturation (Max) @ Ib, Ic :

4V @ 20mA, 5A

Length :

10.2616mm

Time@Peak Reflow Temperature-Max (s) :

40

Current - Collector Cutoff (Max) :

500μA

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

8 Weeks

Element Configuration :

Single

Transistor Type :

NPN - Darlington

Collector Base Voltage (VCBO) :

100V

Height :

15.748mm

Polarity :

NPN

Package / Case :

TO-220-3

Radiation Hardening :

No

Case Connection :

COLLECTOR

Voltage - Rated DC :

100V

Surface Mount :

No

Number of Pins :

3

Emitter Base Voltage (VEBO) :

5V

Number of Elements :

1

Contact Plating :

Tin

Base Part Number :

TIP12*

Number of Terminations :

3

hFE Min :

1000

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Current Rating :

5A

Pin Count :

3

Max Collector Current :

5A

Collector Emitter Saturation Voltage :

2V

REACH SVHC :

No SVHC