TIP117
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- Mfr.Part #
- TIP117
- Manufacturer
- Fairchild Semiconductor
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A TO220-3
- Stock
- 9,265
- In Stock ：
- 9,265
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- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- 5V
- Collector Emitter Voltage (VCEO) :
- 100V
- Peak Reflow Temperature (Cel) :
- 260
- Voltage - Rated DC :
- -100V
- JEDEC-95 Code :
- TO-220AB
- Weight :
- 4.535924g
- Collector Base Voltage (VCBO) :
- 100V
- RoHS Status :
- ROHS3 Compliant
- Pbfree Code :
- yes
- Number of Elements :
- 1
- Number of Terminations :
- 3
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Published :
- 2006
- Pin Count :
- 3
- Current - Collector Cutoff (Max) :
- 2mA
- Height :
- 15.748mm
- Number of Pins :
- 3
- Transistor Element Material :
- SILICON
- Collector Emitter Breakdown Voltage :
- 100V
- Collector Emitter Saturation Voltage :
- 2.5V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Radiation Hardening :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Transition Frequency :
- 25MHz
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Continuous Collector Current :
- 2A
- Element Configuration :
- Single
- Case Connection :
- COLLECTOR
- JESD-609 Code :
- e3
- Mounting Type :
- Through Hole
- Width :
- 4.826mm
- Surface Mount :
- No
- REACH SVHC :
- No SVHC
- Transistor Type :
- PNP - Darlington
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Max Power Dissipation :
- 2W
- Lead Free :
- Lead Free
- Base Part Number :
- TIP11*
- Length :
- 10.2616mm
- Factory Lead Time :
- 8 Weeks
- Max Collector Current :
- 2A
- hFE Min :
- 1000
- Contact Plating :
- Tin
- Operating Temperature :
- -65°C~150°C TJ
- Polarity :
- NPN
- Transistor Application :
- AMPLIFIER
- Current Rating :
- -2A
- ECCN Code :
- EAR99
- Datasheets
- TIP117
PNP - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP117G Overview
In this device, the DC current gain is 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
TIP117G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
TIP117G Applications
There are a lot of ON Semiconductor
TIP117G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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