TIP117
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- Mfr.Part #
- TIP117
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A TO220
- Stock
- 420
- In Stock ：
- 420
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Collector Emitter Breakdown Voltage :
- 100V
- JEDEC-95 Code :
- TO-220AB
- Mounting Type :
- Through Hole
- Collector Emitter Voltage (VCEO) :
- 100V
- Height :
- 15.748mm
- REACH SVHC :
- No SVHC
- Number of Elements :
- 1
- Width :
- 4.826mm
- Peak Reflow Temperature (Cel) :
- 260
- ECCN Code :
- EAR99
- JESD-609 Code :
- e3
- Max Power Dissipation :
- 2W
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Surface Mount :
- No
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Collector Base Voltage (VCBO) :
- 100V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Number of Pins :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transistor Type :
- PNP - Darlington
- Pbfree Code :
- yes
- Polarity :
- NPN
- Pin Count :
- 3
- Package / Case :
- TO-220-3
- Case Connection :
- COLLECTOR
- Factory Lead Time :
- 8 Weeks
- Base Part Number :
- TIP11*
- Packaging :
- Tube
- Number of Terminations :
- 3
- Emitter Base Voltage (VEBO) :
- 5V
- Current Rating :
- -2A
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Transition Frequency :
- 25MHz
- Contact Plating :
- Tin
- Collector Emitter Saturation Voltage :
- 2.5V
- Continuous Collector Current :
- 2A
- Power Dissipation :
- 2W
- Operating Temperature :
- -65°C~150°C TJ
- Published :
- 2006
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Voltage - Rated DC :
- -100V
- Radiation Hardening :
- No
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Transistor Application :
- AMPLIFIER
- Element Configuration :
- Single
- Max Collector Current :
- 2A
- Weight :
- 4.535924g
- Current - Collector Cutoff (Max) :
- 2mA
- hFE Min :
- 1000
- Length :
- 10.2616mm
- Datasheets
- TIP117
PNP - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP117G Overview
In this device, the DC current gain is 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
TIP117G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
TIP117G Applications
There are a lot of ON Semiconductor
TIP117G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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