TIP117
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- Mfr.Part #
- TIP117
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A TO220
- Stock
- 420
- In Stock ：
- 420
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Voltage - Rated DC :
- -100V
- Transistor Type :
- PNP - Darlington
- Contact Plating :
- Tin
- JESD-609 Code :
- e3
- Published :
- 2006
- Max Power Dissipation :
- 2W
- Mounting Type :
- Through Hole
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Emitter Base Voltage (VEBO) :
- 5V
- Transistor Element Material :
- SILICON
- Height :
- 15.748mm
- Length :
- 10.2616mm
- Power Dissipation :
- 2W
- ECCN Code :
- EAR99
- Case Connection :
- COLLECTOR
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Pin Count :
- 3
- Factory Lead Time :
- 8 Weeks
- Package / Case :
- TO-220-3
- Number of Terminations :
- 3
- Operating Temperature :
- -65°C~150°C TJ
- Current - Collector Cutoff (Max) :
- 2mA
- Polarity :
- NPN
- Radiation Hardening :
- No
- Max Collector Current :
- 2A
- Continuous Collector Current :
- 2A
- Packaging :
- Tube
- Current Rating :
- -2A
- Collector Emitter Voltage (VCEO) :
- 100V
- Lead Free :
- Lead Free
- Weight :
- 4.535924g
- Collector Emitter Saturation Voltage :
- 2.5V
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Surface Mount :
- No
- Transistor Application :
- AMPLIFIER
- REACH SVHC :
- No SVHC
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- TIP11*
- Pbfree Code :
- yes
- JEDEC-95 Code :
- TO-220AB
- Collector Emitter Breakdown Voltage :
- 100V
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Number of Pins :
- 3
- Width :
- 4.826mm
- Number of Elements :
- 1
- Element Configuration :
- Single
- Peak Reflow Temperature (Cel) :
- 260
- hFE Min :
- 1000
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Transition Frequency :
- 25MHz
- Collector Base Voltage (VCBO) :
- 100V
- Datasheets
- TIP117
PNP - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP117G Overview
In this device, the DC current gain is 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
TIP117G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
TIP117G Applications
There are a lot of ON Semiconductor
TIP117G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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