TIP117
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- Mfr.Part #
- TIP117
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A TO220
- Stock
- 420
- In Stock ：
- 420
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- JESD-609 Code :
- e3
- Transistor Application :
- AMPLIFIER
- Case Connection :
- COLLECTOR
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Width :
- 4.826mm
- Voltage - Rated DC :
- -100V
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Base Part Number :
- TIP11*
- Collector Base Voltage (VCBO) :
- 100V
- Weight :
- 4.535924g
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Height :
- 15.748mm
- Collector Emitter Breakdown Voltage :
- 100V
- Transistor Element Material :
- SILICON
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Power Dissipation :
- 2W
- Peak Reflow Temperature (Cel) :
- 260
- Radiation Hardening :
- No
- Current - Collector Cutoff (Max) :
- 2mA
- Transition Frequency :
- 25MHz
- Lead Free :
- Lead Free
- Max Collector Current :
- 2A
- Emitter Base Voltage (VEBO) :
- 5V
- Contact Plating :
- Tin
- Pbfree Code :
- yes
- Package / Case :
- TO-220-3
- Polarity :
- NPN
- Collector Emitter Voltage (VCEO) :
- 100V
- Max Power Dissipation :
- 2W
- hFE Min :
- 1000
- ECCN Code :
- EAR99
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Type :
- PNP - Darlington
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Factory Lead Time :
- 8 Weeks
- Collector Emitter Saturation Voltage :
- 2.5V
- Published :
- 2006
- Number of Terminations :
- 3
- Continuous Collector Current :
- 2A
- Current Rating :
- -2A
- Length :
- 10.2616mm
- Surface Mount :
- No
- Datasheets
- TIP117
TIP117 Documents
PNP - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP117G Overview
In this device, the DC current gain is 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
TIP117G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
TIP117G Applications
There are a lot of ON Semiconductor
TIP117G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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