TIP117
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- Mfr.Part #
- TIP117
- Manufacturer
- Solid State Inc.
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- TRANS PNP DARL 100V 2A TO220
- Stock
- 420
- In Stock ：
- 420
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- Manufacturer :
- Solid State Inc.
- Product Category :
- Transistors - Bipolar (BJT) - Single
- Operating Temperature :
- -65°C~150°C TJ
- Transistor Element Material :
- SILICON
- Polarity :
- NPN
- Pin Count :
- 3
- Voltage - Rated DC :
- -100V
- Surface Mount :
- No
- Weight :
- 4.535924g
- Package / Case :
- TO-220-3
- Element Configuration :
- Single
- Additional Feature :
- LEADFORM OPTIONS ARE AVAILABLE
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Pins :
- 3
- JEDEC-95 Code :
- TO-220AB
- RoHS Status :
- ROHS3 Compliant
- Packaging :
- Tube
- Contact Plating :
- Tin
- ECCN Code :
- EAR99
- Vce Saturation (Max) @ Ib, Ic :
- 2.5V @ 8mA, 2A
- Base Part Number :
- TIP11*
- Factory Lead Time :
- 8 Weeks
- Radiation Hardening :
- No
- Length :
- 10.2616mm
- Current Rating :
- -2A
- Lead Free :
- Lead Free
- Peak Reflow Temperature (Cel) :
- 260
- Collector Emitter Breakdown Voltage :
- 100V
- Max Power Dissipation :
- 2W
- Lifecycle Status :
- ACTIVE (Last Updated: 2 days ago)
- Continuous Collector Current :
- 2A
- DC Current Gain (hFE) (Min) @ Ic, Vce :
- 1000 @ 1A 4V
- Mounting Type :
- Through Hole
- Current - Collector Cutoff (Max) :
- 2mA
- Transistor Application :
- AMPLIFIER
- JESD-609 Code :
- e3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Collector Emitter Saturation Voltage :
- 2.5V
- Number of Terminations :
- 3
- Published :
- 2006
- Case Connection :
- COLLECTOR
- Collector Base Voltage (VCBO) :
- 100V
- REACH SVHC :
- No SVHC
- Transition Frequency :
- 25MHz
- Max Collector Current :
- 2A
- Number of Elements :
- 1
- Power Dissipation :
- 2W
- Emitter Base Voltage (VEBO) :
- 5V
- hFE Min :
- 1000
- Transistor Type :
- PNP - Darlington
- Pbfree Code :
- yes
- Collector Emitter Voltage (VCEO) :
- 100V
- Width :
- 4.826mm
- Height :
- 15.748mm
- Datasheets
- TIP117
PNP - Darlington -65°C~150°C TJ 2mA 1 Elements 3 Terminations SILICON TO-220-3 Tube Through Hole
TIP117G Overview
In this device, the DC current gain is 1000 @ 1A 4V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 2.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 2.5V @ 8mA, 2A.A 2A continuous collector voltage is necessary to achieve high efficiency.With the emitter base voltage set at 5V, an efficient operation can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -2A for this device.Single BJT transistor contains a transSingle BJT transistorion frequency of 25MHz.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
TIP117G Features
the DC current gain for this device is 1000 @ 1A 4V
a collector emitter saturation voltage of 2.5V
the vce saturation(Max) is 2.5V @ 8mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is -2A
a transition frequency of 25MHz
TIP117G Applications
There are a lot of ON Semiconductor
TIP117G applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
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