SI9926CDY-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

FET Type :

2 N-Channel (Dual)

Height :

1.75mm

Drain Current-Max (Abs) (ID) :

8A

Time@Peak Reflow Temperature-Max (s) :

30

Number of Elements :

2

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Lead Free :

Lead Free

Turn-Off Delay Time :

35 ns

Gate to Source Voltage (Vgs) :

12V

Contact Plating :

Tin

Published :

2011

Operating Mode :

ENHANCEMENT MODE

FET Feature :

Logic Level Gate

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

18m Ω @ 8.3A, 4.5V

Max Junction Temperature (Tj) :

150°C

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Threshold Voltage :

1.5V

Operating Temperature :

-55°C~150°C TJ

Weight :

186.993455mg

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Turn On Delay Time :

15 ns

Peak Reflow Temperature (Cel) :

260

Mount :

Surface Mount

Base Part Number :

SI9926

Packaging :

Tape and Reel (TR)

Factory Lead Time :

14 Weeks

Drain to Source Breakdown Voltage :

20V

Transistor Application :

SWITCHING

Fall Time (Typ) :

10 ns

Length :

5mm

Number of Terminations :

8

Terminal Form :

Gull wing

Drain to Source Voltage (Vdss) :

20V

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 10V

Element Configuration :

Dual

Continuous Drain Current (ID) :

8A

Rise Time :

12ns

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

Width :

4mm

Max Power Dissipation :

3.1W

Number of Pins :

8

Pin Count :

8

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Resistance :

18mOhm

Pbfree Code :

yes

REACH SVHC :

No SVHC

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Power Dissipation :

2W

JESD-609 Code :

e3