SI9926CDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

33nC @ 10V

Rds On (Max) @ Id, Vgs :

18mOhm @ 8.3A, 4.5V

Current - Continuous Drain (Id) @ 25°C :

8A

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Input Capacitance :

1.2nF

Input Capacitance (Ciss) (Max) @ Vds :

1200pF @ 10V

Base Part Number :

SI9926

Weight :

186.993455mg

Turn-Off Delay Time :

25 ns

Drain to Source Resistance :

18mOhm

Series :

TrenchFET®

Mounting Type :

Surface Mount

Supplier Device Package :

8-SO

Power Dissipation :

3.1W

Rise Time :

12ns

Rds On Max :

18 mΩ

Number of Channels :

2

Vgs(th) (Max) @ Id :

1.5V @ 250µA

RoHS Status :

ROHS3 Compliant

REACH SVHC :

No SVHC

Published :

2009

Drain to Source Breakdown Voltage :

20V

Width :

4mm

Max Operating Temperature :

150°C

Operating Temperature :

-55°C~150°C TJ

Threshold Voltage :

1.5V

Max Power Dissipation :

3.1W

Power - Max :

3.1W

Continuous Drain Current (ID) :

8A

Radiation Hardening :

No

Mount :

Surface Mount

Height :

1.5mm

Turn On Delay Time :

10 ns

Min Operating Temperature :

-55°C

Packaging :

Tape and Reel (TR)

Number of Pins :

8

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Elements :

2

Length :

5mm

Drain to Source Voltage (Vdss) :

20V

Resistance :

18mOhm

Fall Time (Typ) :

10 ns

Element Configuration :

Dual

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

12V