SI9926CDY-T1-E3
- Mfr.Part #
- SI9926CDY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 20V 8A 8-SOIC
- Stock
- 48,167
- In Stock :
- 48,167
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Width :
- 4mm
- Operating Temperature :
- -55°C~150°C TJ
- Max Operating Temperature :
- 150°C
- Turn-Off Delay Time :
- 25 ns
- Max Power Dissipation :
- 3.1W
- Current - Continuous Drain (Id) @ 25°C :
- 8A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Number of Pins :
- 8
- Gate Charge (Qg) (Max) @ Vgs :
- 33nC @ 10V
- Mount :
- Surface Mount
- Number of Elements :
- 2
- Power Dissipation :
- 3.1W
- Drain to Source Breakdown Voltage :
- 20V
- Drain to Source Voltage (Vdss) :
- 20V
- Input Capacitance (Ciss) (Max) @ Vds :
- 1200pF @ 10V
- Rds On (Max) @ Id, Vgs :
- 18mOhm @ 8.3A, 4.5V
- REACH SVHC :
- No SVHC
- Rise Time :
- 12ns
- Vgs(th) (Max) @ Id :
- 1.5V @ 250µA
- Number of Channels :
- 2
- Length :
- 5mm
- Rds On Max :
- 18 mΩ
- Continuous Drain Current (ID) :
- 8A
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- FET Feature :
- Logic Level Gate
- Supplier Device Package :
- 8-SO
- Min Operating Temperature :
- -55°C
- Threshold Voltage :
- 1.5V
- Series :
- TrenchFET®
- Drain to Source Resistance :
- 18mOhm
- RoHS Status :
- ROHS3 Compliant
- Published :
- 2009
- Gate to Source Voltage (Vgs) :
- 12V
- FET Type :
- 2 N-Channel (Dual)
- Factory Lead Time :
- 14 Weeks
- Power - Max :
- 3.1W
- Resistance :
- 18mOhm
- Element Configuration :
- Dual
- Weight :
- 186.993455mg
- Packaging :
- Tape and Reel (TR)
- Fall Time (Typ) :
- 10 ns
- Input Capacitance :
- 1.2nF
- Mounting Type :
- Surface Mount
- Turn On Delay Time :
- 10 ns
- Height :
- 1.5mm
- Base Part Number :
- SI9926
- Datasheets
- SI9926CDY-T1-E3

SI9926CDY-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
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