SI9933BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Length :

5mm

Min Operating Temperature :

-55°C

Operating Temperature :

-55°C~150°C TJ

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Supplier Device Package :

8-SO

Power Dissipation :

1.1W

Rds On (Max) @ Id, Vgs :

60mOhm @ 4.7A, 4.5V

Height :

1.55mm

Lead Free :

Lead Free

Drain to Source Resistance :

60mOhm

Current - Continuous Drain (Id) @ 25°C :

3.6A

Weight :

186.993455mg

Base Part Number :

SI9933

Power - Max :

1.1W

Mount :

Surface Mount

Number of Elements :

2

Drain to Source Breakdown Voltage :

-20V

Width :

4mm

Max Operating Temperature :

150°C

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Packaging :

Tape and Reel (TR)

FET Type :

2 P-Channel (Dual)

Published :

2009

Number of Pins :

8

Fall Time (Typ) :

35 ns

Turn-Off Delay Time :

45 ns

Continuous Drain Current (ID) :

3.6A

Drain to Source Voltage (Vdss) :

20V

Number of Channels :

2

Radiation Hardening :

No

Turn On Delay Time :

22 ns

RoHS Status :

ROHS3 Compliant

Element Configuration :

Dual

Rise Time :

35ns

Rds On Max :

60 mΩ

Max Power Dissipation :

1.1W

Vgs(th) (Max) @ Id :

1.4V @ 250μA

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Gate Charge (Qg) (Max) @ Vgs :

9nC @ 4.5V

Gate to Source Voltage (Vgs) :

12V