SI9910DY-E3

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Mfr.Part #
SI9910DY-E3
Manufacturer
Vishay
Package / Case
8-SOIC (0.154, 3.90mm Width)
Datasheet
Download
Description
IC GATE DRVR HIGH-SIDE 8SOIC
Stock
28,840
In Stock :
28,840

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Manufacturer :
Vishay
Product Category :
Gate Drivers
Max Supply Voltage :
16.5V
Gate Type :
N-Channel MOSFET
Current - Peak Output (Source, Sink) :
1A 1A
Voltage - Supply :
10.8V~16.5V
Rise / Fall Time (Typ) :
50ns 35ns
Fall Time (Typ) :
35 ns
Lead Free :
Lead Free
Max Output Current :
1A
Propagation Delay :
135 ns
Operating Supply Current :
500μA
Mount :
Surface Mount
Radiation Hardening :
No
Max Operating Temperature :
85°C
Rise Time :
50ns
Number of Drivers :
1
Power Dissipation :
700mW
Max Power Dissipation :
700mW
Driven Configuration :
High-Side
Mounting Type :
Surface Mount
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Min Operating Temperature :
-40°C
Number of Pins :
8
Min Supply Voltage :
10.8V
Operating Temperature :
-40°C~150°C TJ
Package / Case :
8-SOIC (0.154, 3.90mm Width)
RoHS Status :
ROHS3 Compliant
Max Supply Current :
500μA
Turn On Delay Time :
135 ns
Base Part Number :
SI9910
Channel Type :
Single
Packaging :
Bulk
Input Type :
Non-Inverting
Number of Outputs :
1
Supplier Device Package :
8-SOIC
High Side Voltage - Max (Bootstrap) :
500V
Published :
2014
Datasheets
SI9910DY-E3
Introducing Gate Drivers Vishay SI9910DY-E3 from Chip IC,where excellence meets affordability. This product stands out with its Mounting Type:Surface Mount, Number of Pins:8, Operating Temperature:-40°C~150°C TJ, Package / Case:8-SOIC (0.154, 3.90mm Width), Base Part Number:SI9910, SI9910DY-E3 pinout, SI9910DY-E3 datasheet PDF, SI9910DY-E3 amp .Beyond Gate Drivers Vishay SI9910DY-E3 ,we also offer FAN3180TSX, DGD2104MS8-13, IRS2005STRPBF, Our vast inventory has you covered. Contact us now for immediate solutions.

Vishay SI9910DY-E3


Gate Drivers Vishay SI9910DY-E3 Overview

Introducing the Gate Drivers Vishay SI9910DY-E3, a high-side gate driver IC housed in an 8-SOIC package, engineered for superior performance in driving MOSFETs and IGBTs. This product by Vishay is designed to enhance the efficiency and reliability of high-frequency switching applications. Its robust design is tailored for advanced electrical systems requiring precise control and optimized power management. The SI9910DY-E3 is an indispensable tool for developers looking to improve the operational efficiency and longevity of their power management systems.

SI9910DY-E3 Features

The SI9910DY-E3 boasts numerous features that make it a standout choice for power electronics engineers. Key features include high-side drive capability, which allows for the direct control of MOSFETs in the high-side configuration. It offers excellent operational stability under wide voltage ranges, ensuring reliable performance across various applications. Furthermore, its compact 8-SOIC package makes it ideal for designs where space is at a premium, without compromising on power and efficiency.

SI9910DY-E3 Applications

  • DC-DC Converters: The SI9910DY-E3 is used to drive the gates of MOSFETs in high-frequency DC-DC converter circuits, enabling efficient power conversion and reducing energy loss.
  • Solar Power Inverters: In solar inverters, this IC manages the high-side switching of MOSFETs, facilitating the efficient conversion of DC solar energy into AC power suitable for grid or home use.
  • Motor Control Systems: Utilized in motor drive applications, the SI9910DY-E3 helps in controlling high-side gates of IGBTs and MOSFETs, ensuring precise motor speed and torque management.
  • Charging Systems for Electric Vehicles: This gate driver is crucial in the management of power electronics in EV charging systems, contributing to faster and safer charging cycles.
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