SI9910DY-E3
- Mfr.Part #
- SI9910DY-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HIGH-SIDE 8SOIC
- Stock
- 28,840
- In Stock :
- 28,840
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- Manufacturer :
- Vishay
- Product Category :
- Gate Drivers
- Max Supply Voltage :
- 16.5V
- Gate Type :
- N-Channel MOSFET
- Current - Peak Output (Source, Sink) :
- 1A 1A
- Voltage - Supply :
- 10.8V~16.5V
- Rise / Fall Time (Typ) :
- 50ns 35ns
- Fall Time (Typ) :
- 35 ns
- Lead Free :
- Lead Free
- Max Output Current :
- 1A
- Propagation Delay :
- 135 ns
- Operating Supply Current :
- 500μA
- Mount :
- Surface Mount
- Radiation Hardening :
- No
- Max Operating Temperature :
- 85°C
- Rise Time :
- 50ns
- Number of Drivers :
- 1
- Power Dissipation :
- 700mW
- Max Power Dissipation :
- 700mW
- Driven Configuration :
- High-Side
- Mounting Type :
- Surface Mount
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Min Operating Temperature :
- -40°C
- Number of Pins :
- 8
- Min Supply Voltage :
- 10.8V
- Operating Temperature :
- -40°C~150°C TJ
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- RoHS Status :
- ROHS3 Compliant
- Max Supply Current :
- 500μA
- Turn On Delay Time :
- 135 ns
- Base Part Number :
- SI9910
- Channel Type :
- Single
- Packaging :
- Bulk
- Input Type :
- Non-Inverting
- Number of Outputs :
- 1
- Supplier Device Package :
- 8-SOIC
- High Side Voltage - Max (Bootstrap) :
- 500V
- Published :
- 2014
- Datasheets
- SI9910DY-E3

Gate Drivers Vishay SI9910DY-E3 Overview
Introducing the Gate Drivers Vishay SI9910DY-E3, a high-side gate driver IC housed in an 8-SOIC package, engineered for superior performance in driving MOSFETs and IGBTs. This product by Vishay is designed to enhance the efficiency and reliability of high-frequency switching applications. Its robust design is tailored for advanced electrical systems requiring precise control and optimized power management. The SI9910DY-E3 is an indispensable tool for developers looking to improve the operational efficiency and longevity of their power management systems.
SI9910DY-E3 Features
The SI9910DY-E3 boasts numerous features that make it a standout choice for power electronics engineers. Key features include high-side drive capability, which allows for the direct control of MOSFETs in the high-side configuration. It offers excellent operational stability under wide voltage ranges, ensuring reliable performance across various applications. Furthermore, its compact 8-SOIC package makes it ideal for designs where space is at a premium, without compromising on power and efficiency.
SI9910DY-E3 Applications
- DC-DC Converters: The SI9910DY-E3 is used to drive the gates of MOSFETs in high-frequency DC-DC converter circuits, enabling efficient power conversion and reducing energy loss.
- Solar Power Inverters: In solar inverters, this IC manages the high-side switching of MOSFETs, facilitating the efficient conversion of DC solar energy into AC power suitable for grid or home use.
- Motor Control Systems: Utilized in motor drive applications, the SI9910DY-E3 helps in controlling high-side gates of IGBTs and MOSFETs, ensuring precise motor speed and torque management.
- Charging Systems for Electric Vehicles: This gate driver is crucial in the management of power electronics in EV charging systems, contributing to faster and safer charging cycles.
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