SI9926BDY-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

20mOhm @ 8.2A, 4.5V

Published :

2007

Fall Time (Typ) :

50 ns

Turn On Delay Time :

35 ns

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 4.5V

Length :

4.9784mm

Continuous Drain Current (ID) :

8.2A

Resistance :

20mOhm

Min Operating Temperature :

-55°C

Radiation Hardening :

No

Packaging :

Tape and Reel (TR)

Rds On Max :

20 mΩ

Element Configuration :

Dual

Turn-Off Delay Time :

31 ns

Max Operating Temperature :

150°C

Mount :

Surface Mount

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Power Dissipation :

1.14W

Width :

3.9878mm

Drain to Source Voltage (Vdss) :

20V

Lead Free :

Lead Free

Rise Time :

50ns

Number of Channels :

2

Operating Temperature :

-55°C~150°C TJ

Nominal Vgs :

600 mV

Number of Pins :

8

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

SI9926

FET Type :

2 N-Channel (Dual)

Max Power Dissipation :

1.14W

Height :

1.5494mm

Mounting Type :

Surface Mount

Gate to Source Voltage (Vgs) :

12V

Drain to Source Breakdown Voltage :

20V

Power - Max :

1.14W

Weight :

506.605978mg

Supplier Device Package :

8-SO

Number of Elements :

2

Drain to Source Resistance :

20mOhm

Vgs(th) (Max) @ Id :

1.5V @ 250µA

FET Feature :

Logic Level Gate

Current - Continuous Drain (Id) @ 25°C :

6.2A

Package / Case :

8-SOIC (0.154, 3.90mm Width)