SI9912DY-T1-E3

Manufacturer :

Vishay

Product Category :

Gate Drivers

Max Power Dissipation :

830mW

Terminal Position :

Dual

Power Supplies :

5V

Base Part Number :

SI9912

Voltage - Supply :

4.5V~5.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Height Seated (Max) :

1.75mm

Turn On Delay Time :

30 ns

Operating Supply Current :

1mA

Operating Supply Voltage :

5V

Terminal Form :

Gull wing

Power Dissipation :

830mW

Rise / Fall Time (Typ) :

30ns 20ns

Output Current :

1A

Channel Type :

SYNCHRONOUS

Operating Temperature :

-40°C~125°C TJ

Fall Time (Typ) :

25 ns

Width :

3.9mm

Driven Configuration :

Half-Bridge

Current - Peak Output (Source, Sink) :

1A 1A

High Side Driver :

yes

Radiation Hardening :

No

Output Peak Current Limit-Nom :

1A

Packaging :

Tape and Reel (TR)

Pin Count :

8

Gate Type :

N-Channel MOSFET

RoHS Status :

ROHS3 Compliant

Max Output Current :

1A

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Frequency :

1MHz

Time@Peak Reflow Temperature-Max (s) :

40

Published :

2014

Input Type :

Non-Inverting

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Pins :

8

Number of Functions :

1

Mount :

Surface Mount

Number of Terminations :

8

Number of Drivers :

2

Terminal Finish :

Matte Tin (Sn)

Length :

4.9mm

Weight :

506.605978mg

Pbfree Code :

yes

Rise Time :

25ns

Supply Voltage :

5V

JESD-609 Code :

e3

High Side Voltage - Max (Bootstrap) :

30V

Propagation Delay :

30 ns

Mounting Type :

Surface Mount