SI9913DY-T1-E3
- Mfr.Part #
- SI9913DY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- IC GATE DRVR HALF-BRIDGE 8SO
- Stock
- 3,335
- In Stock :
- 3,335
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- Manufacturer :
- Vishay
- Product Category :
- Gate Drivers
- Number of Functions :
- 1
- RoHS Status :
- ROHS3 Compliant
- High Side Voltage - Max (Bootstrap) :
- 30V
- Rise / Fall Time (Typ) :
- 30ns 20ns
- Radiation Hardening :
- No
- Number of Drivers :
- 2
- Published :
- 2009
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Output Peak Current Limit-Nom :
- 1A
- ECCN Code :
- EAR99
- Voltage - Supply :
- 4.5V~5.5V
- Turn On Delay Time :
- 30 ns
- Terminal Form :
- Gull wing
- Propagation Delay :
- 30 ns
- Terminal Finish :
- Matte Tin (Sn)
- Power Dissipation :
- 830mW
- Packaging :
- Tape and Reel (TR)
- Turn Off Time :
- 0.03 μs
- Driven Configuration :
- Half-Bridge
- Time@Peak Reflow Temperature-Max (s) :
- 40
- JESD-609 Code :
- e3
- High Side Driver :
- yes
- Terminal Position :
- Dual
- Pbfree Code :
- yes
- Channel Type :
- SYNCHRONOUS
- Height Seated (Max) :
- 1.75mm
- Power Supplies :
- 5V
- Supply Voltage :
- 5V
- Max Output Current :
- 1A
- Mounting Type :
- Surface Mount
- Peak Reflow Temperature (Cel) :
- 260
- Current - Peak Output (Source, Sink) :
- 1A 1A
- Gate Type :
- N-Channel MOSFET
- Input Type :
- Non-Inverting
- Operating Temperature :
- -40°C~125°C TJ
- Number of Terminations :
- 8
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Time :
- 0.03 μs
- Mount :
- Surface Mount
- Weight :
- 506.605978mg
- Number of Pins :
- 8
- Base Part Number :
- SI9913
- Length :
- 4.9mm
- Width :
- 3.9mm
- Max Power Dissipation :
- 830mW
- Operating Supply Current :
- 9mA
- Pin Count :
- 8
- Frequency :
- 1MHz
- Datasheets
- SI9913DY-T1-E3

Gate Drivers Vishay SI9913DY-T1-E3 Overview
The Vishay SI9913DY-T1-E3 Gate Driver is a cutting-edge half-bridge driver IC designed for high-performance applications requiring efficient power management and signal fidelity. This product, part of Vishay's renowned gate driver portfolio, is housed in an 8SO package, offering compact and reliable integration. The SI9913DY-T1-E3 is optimized for driving N-Channel MOSFETs and IGBTs, making it a critical component in advanced power conversion systems. Its robust design ensures high-speed operation and minimizes switching losses, which is essential for high-efficiency applications. The integration of this IC in your systems promises enhanced performance and reliability, positioning it as a prime choice for B2B clients looking to bulk purchase high-quality gate drivers.
SI9913DY-T1-E3 Features
This Vishay gate driver IC is equipped with multiple features designed to enhance its performance and usability in complex electronics systems. Key features include robust high-side and low-side driver channels, matched propagation delays for both channels, and built-in under-voltage lockout protection. Additionally, the SI9913DY-T1-E3 offers an extended operating temperature range, which makes it suitable for various industrial environments.
SI9913DY-T1-E3 Applications
- Electric Vehicles: Utilized in the power management systems to efficiently drive the power converters that manage battery operations.
- Solar Power Inverters: Critical for converting DC output from solar panels into AC, enhancing the efficiency and reliability of solar installations.
- Uninterruptible Power Supplies (UPS): Ensures smooth and reliable operation, driving the power stages that are crucial for emergency power backup systems.
- Switch Mode Power Supplies: Helps in achieving efficient switching performances that are essential for regulating voltage and current in power supplies.
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