SI5515DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Supplier Device Package :

1206-8 ChipFET™

Number of Channels :

2

Number of Pins :

8

Drain to Source Resistance :

69mOhm

FET Type :

N and P-Channel

Max Operating Temperature :

150°C

Lead Free :

Lead Free

Vgs(th) (Max) @ Id :

1V @ 250μA

Nominal Vgs :

400 mV

Weight :

84.99187mg

Number of Elements :

2

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2009

Radiation Hardening :

No

Fall Time (Typ) :

32 ns

Package / Case :

8-SMD, Flat Lead

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

RoHS Status :

ROHS3 Compliant

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Height :

1.1mm

Power - Max :

1.1W

Power Dissipation :

1.1W

Base Part Number :

SI5515

Continuous Drain Current (ID) :

4.4A

Resistance :

40mOhm

Gate to Source Voltage (Vgs) :

8V

Turn On Delay Time :

18 ns

Min Operating Temperature :

-55°C

Rise Time :

32ns

Drain to Source Voltage (Vdss) :

20V

Threshold Voltage :

400mV

Mounting Type :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

Unknown

Mount :

Surface Mount

Max Power Dissipation :

1.1W

Rds On Max :

40 mΩ

Rds On (Max) @ Id, Vgs :

40mOhm @ 4.4A, 4.5V

Turn-Off Delay Time :

42 ns

Current - Continuous Drain (Id) @ 25°C :

4.4A 3A

Series :

TrenchFET®

Length :

3.05mm

Width :

1.65mm