SI5504BDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Width :

1.65mm

Rds On (Max) @ Id, Vgs :

65m Ω @ 3.1A, 10V

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Height :

1.1mm

Turn On Delay Time :

4 ns

Terminal Form :

C BEND

Number of Elements :

2

Vgs(th) (Max) @ Id :

3V @ 250µA

Mounting Type :

Surface Mount

Max Power Dissipation :

3.1W

Operating Mode :

ENHANCEMENT MODE

Drain Current-Max (Abs) (ID) :

4A

Package / Case :

8-SMD, Flat Lead

Time@Peak Reflow Temperature-Max (s) :

40

Drain to Source Breakdown Voltage :

30V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Fall Time (Typ) :

5 ns

Number of Pins :

8

Power Dissipation :

1.5W

Pulsed Drain Current-Max (IDM) :

10A

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Feature :

Logic Level Gate

Case Connection :

DRAIN

Pin Count :

8

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Length :

3.05mm

Mount :

Surface Mount

Radiation Hardening :

No

Operating Temperature :

-55°C~150°C TJ

Terminal Position :

Dual

FET Type :

N and P-Channel

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Power - Max :

3.12W 3.1W

Turn-Off Delay Time :

10 ns

Published :

2003

Weight :

84.99187mg

Number of Channels :

2

Terminal Finish :

Matte Tin (Sn)

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

4A

Resistance :

140mOhm

Series :

TrenchFET®

Base Part Number :

SI5504

Number of Terminations :

8

Current - Continuous Drain (Id) @ 25°C :

4A 3.7A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Gate Charge (Qg) (Max) @ Vgs :

7nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

JESD-609 Code :

e3

Rise Time :

10ns