SI5504DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rds On (Max) @ Id, Vgs :

85m Ω @ 2.9A, 10V

Operating Mode :

ENHANCEMENT MODE

FET Type :

N and P-Channel

Threshold Voltage :

1V

Mount :

Surface Mount

Series :

TrenchFET®

JESD-609 Code :

e3

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Element Configuration :

Dual

Lead Free :

Lead Free

Resistance :

165mOhm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

SI5504

Max Power Dissipation :

1.1W

Current - Continuous Drain (Id) @ 25°C :

2.9A 2.1A

Terminal Form :

C BEND

Turn-Off Delay Time :

14 ns

ECCN Code :

EAR99

Pin Count :

8

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Gate to Source Voltage (Vgs) :

20V

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Transistor Element Material :

SILICON

Dual Supply Voltage :

30V

Power Dissipation :

1.1W

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

Radiation Hardening :

No

Peak Reflow Temperature (Cel) :

260

Time@Peak Reflow Temperature-Max (s) :

40

Nominal Vgs :

1 V

Drain to Source Breakdown Voltage :

30V

Terminal Finish :

Matte Tin (Sn)

Packaging :

Tape and Reel (TR)

Rise Time :

11ns

Published :

2010

Number of Elements :

2

Fall Time (Typ) :

11 ns

REACH SVHC :

No SVHC

Termination :

SMD/SMT

Package / Case :

8-SMD, Flat Lead

Number of Pins :

8

RoHS Status :

ROHS3 Compliant

Continuous Drain Current (ID) :

2.1A

Number of Terminations :

8