SI5504DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Package / Case :

8-SMD, Flat Lead

Operating Temperature :

-55°C~150°C TJ

Radiation Hardening :

No

Fall Time (Typ) :

11 ns

Terminal Finish :

Matte Tin (Sn)

Number of Pins :

8

Resistance :

165mOhm

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 10V

Drain to Source Breakdown Voltage :

30V

Current - Continuous Drain (Id) @ 25°C :

2.9A 2.1A

Rise Time :

11ns

FET Feature :

Logic Level Gate

ECCN Code :

EAR99

Number of Elements :

2

Power Dissipation :

1.1W

Continuous Drain Current (ID) :

2.1A

Turn-Off Delay Time :

14 ns

Pbfree Code :

yes

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

85m Ω @ 2.9A, 10V

Termination :

SMD/SMT

Number of Terminations :

8

Mount :

Surface Mount

Time@Peak Reflow Temperature-Max (s) :

40

Pin Count :

8

Element Configuration :

Dual

Terminal Form :

C BEND

Packaging :

Tape and Reel (TR)

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Dual Supply Voltage :

30V

FET Type :

N and P-Channel

Max Power Dissipation :

1.1W

Threshold Voltage :

1V

Nominal Vgs :

1 V

Mounting Type :

Surface Mount

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Peak Reflow Temperature (Cel) :

260

REACH SVHC :

No SVHC

Published :

2010

Base Part Number :

SI5504

Lead Free :

Lead Free

Transistor Element Material :

SILICON

Gate to Source Voltage (Vgs) :

20V