SI5509DC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Mounting Type :

Surface Mount

Threshold Voltage :

2V

Element Configuration :

Dual

Gate to Source Voltage (Vgs) :

12V

Series :

TrenchFET®

Transistor Application :

SWITCHING

Resistance :

90mOhm

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

6.1A 4.8A

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

2.1W

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 5V

Rds On (Max) @ Id, Vgs :

52m Ω @ 5A, 4.5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 10V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Power - Max :

4.5W

Fall Time (Typ) :

60 ns

Vgs(th) (Max) @ Id :

2V @ 250μA

Pulsed Drain Current-Max (IDM) :

10A

Drain Current-Max (Abs) (ID) :

5A

Published :

2011

Number of Pins :

8

Operating Mode :

ENHANCEMENT MODE

Drain to Source Breakdown Voltage :

20V

FET Type :

N and P-Channel

Radiation Hardening :

No

Turn-Off Delay Time :

25 ns

Mount :

Surface Mount

Rise Time :

75ns

Base Part Number :

SI5509

Pin Count :

8

FET Feature :

Logic Level Gate

Pbfree Code :

yes

Operating Temperature :

-55°C~150°C TJ

REACH SVHC :

No SVHC

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Max Power Dissipation :

2.1W

Package / Case :

8-SMD, Flat Lead

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Continuous Drain Current (ID) :

5A

Number of Elements :

2

JESD-609 Code :

e3

Terminal Finish :

Matte Tin (Sn)

Number of Terminations :

8