SI5515CDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

8-SMD, Flat Lead

Terminal Position :

Dual

Factory Lead Time :

14 Weeks

Transistor Application :

SWITCHING

Base Part Number :

SI5515

Vgs(th) (Max) @ Id :

800mV @ 250μA

Pin Count :

8

Width :

1.65mm

Transistor Element Material :

SILICON

Number of Terminations :

8

Length :

3.05mm

Radiation Hardening :

No

Weight :

84.99187mg

Terminal Form :

C BEND

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e3

Series :

TrenchFET®

Current - Continuous Drain (Id) @ 25°C :

4A Tc

ECCN Code :

EAR99

Input Capacitance (Ciss) (Max) @ Vds :

632pF @ 10V

Drain Current-Max (Abs) (ID) :

4A

Packaging :

Tape and Reel (TR)

Contact Plating :

Tin

Gate to Source Voltage (Vgs) :

8V

Fall Time (Typ) :

6 ns

FET Feature :

Logic Level Gate

Operating Temperature :

-55°C~150°C TJ

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

11.3nC @ 5V

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Nominal Vgs :

800 mV

Threshold Voltage :

800mV

FET Type :

N and P-Channel

RoHS Status :

ROHS3 Compliant

Rds On (Max) @ Id, Vgs :

36m Ω @ 6A, 4.5V

Turn On Delay Time :

10 ns

Number of Elements :

2

Drain-source On Resistance-Max :

0.036Ohm

Turn-Off Delay Time :

25 ns

Max Power Dissipation :

3.1W

Mount :

Surface Mount

Number of Channels :

2

Continuous Drain Current (ID) :

4A

Number of Pins :

8

Drain to Source Breakdown Voltage :

20V

Rise Time :

32ns

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2015

REACH SVHC :

No SVHC

Peak Reflow Temperature (Cel) :

260

Height :

1.1mm

Power Dissipation :

1.3W