SI5509DC-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain to Source Voltage (Vdss) :

20V

Peak Reflow Temperature (Cel) :

260

DS Breakdown Voltage-Min :

20V

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

12V

Pin Count :

8

Gate Charge (Qg) (Max) @ Vgs :

6.6nC @ 5V

Terminal Finish :

Pure Matte Tin (Sn)

Number of Terminations :

8

RoHS Status :

ROHS3 Compliant

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

4.5W

Transistor Element Material :

SILICON

Base Part Number :

SI5509

Package / Case :

8-SMD, Flat Lead

Mounting Type :

Surface Mount

Pbfree Code :

yes

FET Feature :

Logic Level Gate

Drain-source On Resistance-Max :

0.052Ohm

Drain Current-Max (Abs) (ID) :

5A

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Number of Pins :

8

Time@Peak Reflow Temperature-Max (s) :

30

Terminal Position :

Dual

Operating Temperature :

-55°C~150°C TJ

Configuration :

SINGLE WITH BUILT-IN DIODE

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

N and P-Channel

Continuous Drain Current (ID) :

4.8A

Published :

2013

Current - Continuous Drain (Id) @ 25°C :

6.1A 4.8A

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

2V @ 250μA

Input Capacitance (Ciss) (Max) @ Vds :

455pF @ 10V

Pulsed Drain Current-Max (IDM) :

10A

Rds On (Max) @ Id, Vgs :

52m Ω @ 5A, 4.5V

Number of Elements :

1

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount