SI5513CDC-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Drain Current-Max (Abs) (ID) :

4A

FET Feature :

Logic Level Gate

Gate Charge (Qg) (Max) @ Vgs :

4.2nC @ 5V

Base Part Number :

SI5513

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Series :

TrenchFET®

Length :

3.05mm

Number of Terminations :

8

Terminal Form :

C BEND

Fall Time (Typ) :

40 ns

Max Power Dissipation :

3.1W

Gate to Source Voltage (Vgs) :

12V

Pin Count :

8

Number of Pins :

8

Rds On (Max) @ Id, Vgs :

55m Ω @ 4.3A, 4.5V

Terminal Position :

Dual

Height :

1.1mm

Turn-Off Delay Time :

15 ns

Rise Time :

40ns

Width :

1.65mm

Continuous Drain Current (ID) :

3.7A

FET Type :

N and P-Channel

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

8-SMD, Flat Lead

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Radiation Hardening :

No

Turn On Delay Time :

19 ns

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

1.7W

Input Capacitance (Ciss) (Max) @ Vds :

285pF @ 10V

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

Drain-source On Resistance-Max :

0.055Ohm

Time@Peak Reflow Temperature-Max (s) :

30

ECCN Code :

EAR99

Number of Elements :

2

Published :

2015

Factory Lead Time :

14 Weeks

Contact Plating :

Tin

Mount :

Surface Mount

Mounting Type :

Surface Mount

Drain to Source Voltage (Vdss) :

20V

Current - Continuous Drain (Id) @ 25°C :

4A 3.7A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Weight :

84.99187mg

Transistor Element Material :

SILICON

Operating Temperature :

-55°C~150°C TJ