SI4946BEY-T1-E3
- Mfr.Part #
- SI4946BEY-T1-E3
- Manufacturer
- Vishay
- Package / Case
- 8-SOIC (0.154, 3.90mm Width)
- Datasheet
- Download
- Description
- MOSFET 2N-CH 60V 6.5A 8-SOIC
- Stock
- 48,279
- In Stock :
- 48,279
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- Manufacturer :
- Vishay
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Turn On Delay Time :
- 10 ns
- Power - Max :
- 3.7W
- JESD-609 Code :
- e3
- Mount :
- Surface Mount
- Operating Mode :
- ENHANCEMENT MODE
- Drain Current-Max (Abs) (ID) :
- 5.3A
- Max Junction Temperature (Tj) :
- 175°C
- Peak Reflow Temperature (Cel) :
- 260
- Fall Time (Typ) :
- 10 ns
- Resistance :
- 41mOhm
- RoHS Status :
- ROHS3 Compliant
- Rise Time :
- 12ns
- Published :
- 2007
- Input Capacitance (Ciss) (Max) @ Vds :
- 840pF @ 30V
- Width :
- 4mm
- Gate to Source Voltage (Vgs) :
- 20V
- Power Dissipation :
- 2.4W
- Package / Case :
- 8-SOIC (0.154, 3.90mm Width)
- Radiation Hardening :
- No
- FET Feature :
- Logic Level Gate
- Height :
- 1.75mm
- Operating Temperature :
- -55°C~175°C TJ
- Transistor Element Material :
- SILICON
- Base Part Number :
- SI4946
- Lead Free :
- Lead Free
- Weight :
- 506.605978mg
- Number of Elements :
- 2
- Drain to Source Voltage (Vdss) :
- 60V
- Number of Pins :
- 8
- Element Configuration :
- Dual
- Continuous Drain Current (ID) :
- 6.5A
- Rds On (Max) @ Id, Vgs :
- 41m Ω @ 5.3A, 10V
- Factory Lead Time :
- 14 Weeks
- Terminal Finish :
- MATTE TIN
- Mounting Type :
- Surface Mount
- Pulsed Drain Current-Max (IDM) :
- 30A
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Series :
- TrenchFET®
- Length :
- 5mm
- Number of Channels :
- 2
- Drain to Source Breakdown Voltage :
- 60V
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Terminal Form :
- Gull wing
- Number of Terminations :
- 8
- FET Type :
- 2 N-Channel (Dual)
- Gate Charge (Qg) (Max) @ Vgs :
- 25nC @ 10V
- REACH SVHC :
- No SVHC
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- Max Power Dissipation :
- 2.4W
- Turn-Off Delay Time :
- 25 ns
- Threshold Voltage :
- 2.4V
- Vgs(th) (Max) @ Id :
- 3V @ 250µA
- Pin Count :
- 8
- Packaging :
- Tape and Reel (TR)
- ECCN Code :
- EAR99
- Datasheets
- SI4946BEY-T1-E3

SI4946BEY-T1-E3 datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Vishay Siliconix stock available at
SI4946BEY-T1-E3 Description
The SI4946BEY-T1-E3 is a Dual N-Channel 60-V (D-S) 175 °C MOSFET. The SI4946BEY-T1-E3 is a 60V Dual N-channel TrenchFET® Power MOSFET. The surface-mounted LITTLE FOOT® power MOSFET makes use of integrated circuits and small-signal packages that have undergone modifications to give the enhanced heat transfer capabilities needed by power devices.
SI4946BEY-T1-E3 Features
-
175 °C Maximum Junction Temperature
-
100 % Rg Tested
-
Compliant to RoHS directive 2002/95/EC
-
Halogen-free According to IEC 61249-2-21 Definition
-
TrenchFET® Power MOSFET
SI4946BEY-T1-E3 Applications
-
Power Management
-
Automotive electronics
-
SMPS ( switch mode power supply )
-
DC relay in electronics
-
Digital circuits
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