SI3951DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Threshold Voltage :

-1.5V

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Mount :

Surface Mount

Pulsed Drain Current-Max (IDM) :

10A

Base Part Number :

SI3951

JESD-609 Code :

e3

Radiation Hardening :

No

Drain to Source Voltage (Vdss) :

20V

Pin Count :

6

Input Capacitance (Ciss) (Max) @ Vds :

250pF @ 10V

Turn-Off Delay Time :

32 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Drain-source On Resistance-Max :

0.115Ohm

Number of Pins :

6

Number of Elements :

2

REACH SVHC :

Unknown

Packaging :

Tape and Reel (TR)

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

-2.7A

Time@Peak Reflow Temperature-Max (s) :

30

Published :

2015

Pbfree Code :

yes

Turn On Delay Time :

9 ns

Factory Lead Time :

21 Weeks

Rds On (Max) @ Id, Vgs :

115m Ω @ 2.5A, 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Terminal Finish :

PURE MATTE TIN

Gate to Source Voltage (Vgs) :

12V

Max Power Dissipation :

1.14W

Power - Max :

2W

Transistor Element Material :

SILICON

FET Feature :

Logic Level Gate

Number of Terminations :

6

Rise Time :

30ns

FET Type :

2 P-Channel (Dual)

Mounting Type :

Surface Mount

ECCN Code :

EAR99

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2.7A

RoHS Status :

ROHS3 Compliant

Terminal Form :

Gull wing

Element Configuration :

Dual

Peak Reflow Temperature (Cel) :

260

Fall Time (Typ) :

16 ns

Drain to Source Breakdown Voltage :

-20V

Gate Charge (Qg) (Max) @ Vgs :

5.1nC @ 5V