SI3911DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Pins :

6

Rds On (Max) @ Id, Vgs :

145m Ω @ 2.2A, 4.5V

Base Part Number :

SI3911

Turn-Off Delay Time :

24 ns

Pin Count :

6

Packaging :

Cut Tape (CT)

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Lead Free :

Lead Free

Terminal Finish :

Matte Tin (Sn)

Drain to Source Voltage (Vdss) :

20V

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Series :

TrenchFET®

Gate to Source Voltage (Vgs) :

8V

JESD-609 Code :

e3

Element Configuration :

Dual

Rise Time :

29ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Fall Time (Typ) :

29 ns

FET Type :

2 P-Channel (Dual)

Mounting Type :

Surface Mount

Continuous Drain Current (ID) :

-2.2A

Power Dissipation :

830mW

Published :

2013

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Drain Current-Max (Abs) (ID) :

1.8A

DS Breakdown Voltage-Min :

20V

Max Operating Temperature :

150°C

Radiation Hardening :

No

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Pbfree Code :

yes

Max Power Dissipation :

830mW

Time@Peak Reflow Temperature-Max (s) :

40

Turn On Delay Time :

12 ns

Mount :

Surface Mount

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing

Number of Elements :

2

Resistance :

145mOhm

Current - Continuous Drain (Id) @ 25°C :

1.8A

Min Operating Temperature :

-55°C