SI3932DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Height :

1.1mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Threshold Voltage :

2.2V

Published :

2010

Packaging :

Tape and Reel (TR)

Rds On (Max) @ Id, Vgs :

58m Ω @ 3.4A, 10V

Resistance :

58mOhm

Weight :

19.986414mg

Vgs(th) (Max) @ Id :

2.2V @ 250µA

Contact Plating :

Tin

JESD-609 Code :

e3

Current - Continuous Drain (Id) @ 25°C :

3.7A

Pbfree Code :

yes

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

Max Junction Temperature (Tj) :

150°C

Peak Reflow Temperature (Cel) :

260

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Transistor Element Material :

SILICON

Turn On Delay Time :

5 ns

Gate to Source Voltage (Vgs) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Mounting Type :

Surface Mount

Factory Lead Time :

14 Weeks

Number of Elements :

2

ECCN Code :

EAR99

FET Type :

2 N-Channel (Dual)

Number of Terminations :

6

Nominal Vgs :

1.2 V

Mount :

Surface Mount

Pin Count :

6

Number of Channels :

2

Terminal Form :

Gull wing

Time@Peak Reflow Temperature-Max (s) :

30

Number of Pins :

6

Drain Current-Max (Abs) (ID) :

3.7A

Series :

TrenchFET®

Turn-Off Delay Time :

10 ns

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

1.14W

Max Power Dissipation :

1.4W

REACH SVHC :

Unknown

Rise Time :

15ns

Base Part Number :

SI3932

Fall Time (Typ) :

10 ns

Operating Temperature :

-55°C~150°C TJ

Drain to Source Breakdown Voltage :

30V

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

3.4A

Element Configuration :

Dual

Input Capacitance (Ciss) (Max) @ Vds :

235pF @ 15V

Gate Charge (Qg) (Max) @ Vgs :

6nC @ 10V