SI3900DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Threshold Voltage :

600mV

Drain Current-Max (Abs) (ID) :

2A

Rise Time :

30ns

Resistance :

125mOhm

Number of Elements :

2

RoHS Status :

ROHS3 Compliant

FET Type :

2 N-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Pin Count :

6

Number of Channels :

2

Height :

1mm

Series :

TrenchFET®

Length :

3.05mm

Lead Free :

Lead Free

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Published :

2007

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Weight :

19.986414mg

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

12V

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

JESD-609 Code :

e3

Packaging :

Tape and Reel (TR)

Max Power Dissipation :

830mW

Element Configuration :

Dual

Drain to Source Voltage (Vdss) :

20V

Drain to Source Breakdown Voltage :

20V

Transistor Element Material :

SILICON

Terminal Finish :

MATTE TIN

Nominal Vgs :

600 mV

Factory Lead Time :

14 Weeks

Continuous Drain Current (ID) :

2A

Terminal Form :

Gull wing

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Turn-Off Delay Time :

14 ns

Mount :

Surface Mount

Base Part Number :

SI3900

Number of Terminations :

6

REACH SVHC :

Unknown

ECCN Code :

EAR99

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Number of Pins :

6

Fall Time (Typ) :

30 ns

Width :

1.65mm

Rds On (Max) @ Id, Vgs :

125m Ω @ 2.4A, 4.5V

Power Dissipation :

830mW

Mounting Type :

Surface Mount

Turn On Delay Time :

10 ns