SI3900DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Peak Reflow Temperature (Cel) :

260

Resistance :

125mOhm

Threshold Voltage :

600mV

Drain to Source Breakdown Voltage :

20V

Time@Peak Reflow Temperature-Max (s) :

40

Length :

3.05mm

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

2

Radiation Hardening :

No

Pin Count :

6

Fall Time (Typ) :

30 ns

Operating Mode :

ENHANCEMENT MODE

Mount :

Surface Mount

Continuous Drain Current (ID) :

2A

RoHS Status :

ROHS3 Compliant

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Base Part Number :

SI3900

Terminal Finish :

MATTE TIN

ECCN Code :

EAR99

Gate to Source Voltage (Vgs) :

12V

Rise Time :

30ns

REACH SVHC :

Unknown

Turn On Delay Time :

10 ns

FET Type :

2 N-Channel (Dual)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Factory Lead Time :

14 Weeks

Transistor Element Material :

SILICON

Mounting Type :

Surface Mount

Width :

1.65mm

Number of Pins :

6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

14 ns

Rds On (Max) @ Id, Vgs :

125m Ω @ 2.4A, 4.5V

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Element Configuration :

Dual

Nominal Vgs :

600 mV

Height :

1mm

Published :

2007

Drain to Source Voltage (Vdss) :

20V

Series :

TrenchFET®

Packaging :

Tape and Reel (TR)

Number of Terminations :

6

Terminal Form :

Gull wing

JESD-609 Code :

e3

Drain Current-Max (Abs) (ID) :

2A

Number of Elements :

2

Lead Free :

Lead Free

Max Power Dissipation :

830mW

FET Feature :

Logic Level Gate

Power Dissipation :

830mW

Weight :

19.986414mg