SI3900DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

ECCN Code :

EAR99

Terminal Finish :

MATTE TIN

RoHS Status :

ROHS3 Compliant

Operating Mode :

ENHANCEMENT MODE

Published :

2007

Rise Time :

30ns

JESD-609 Code :

e3

Operating Temperature :

-55°C~150°C TJ

Series :

TrenchFET®

Element Configuration :

Dual

Lead Free :

Lead Free

Radiation Hardening :

No

Length :

3.05mm

Number of Channels :

2

Time@Peak Reflow Temperature-Max (s) :

40

Gate to Source Voltage (Vgs) :

12V

Weight :

19.986414mg

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Width :

1.65mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 N-Channel (Dual)

Number of Terminations :

6

Base Part Number :

SI3900

Fall Time (Typ) :

30 ns

Drain to Source Breakdown Voltage :

20V

Drain to Source Voltage (Vdss) :

20V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

14 Weeks

Power Dissipation :

830mW

Number of Elements :

2

Turn-Off Delay Time :

14 ns

Threshold Voltage :

600mV

Mount :

Surface Mount

Nominal Vgs :

600 mV

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Drain Current-Max (Abs) (ID) :

2A

Max Power Dissipation :

830mW

Number of Pins :

6

Terminal Form :

Gull wing

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

10 ns

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

2A

REACH SVHC :

Unknown

Height :

1mm

Pin Count :

6

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Rds On (Max) @ Id, Vgs :

125m Ω @ 2.4A, 4.5V

Peak Reflow Temperature (Cel) :

260

Resistance :

125mOhm

Transistor Element Material :

SILICON