SI3909DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Elements :

2

Drain to Source Breakdown Voltage :

20V

Series :

TrenchFET®

Rds On (Max) @ Id, Vgs :

200m Ω @ 1.8A, 4.5V

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

1.15W

Vgs(th) (Max) @ Id :

500mV @ 250μA (Min)

FET Feature :

Logic Level Gate

Terminal Form :

Gull wing

Gate to Source Voltage (Vgs) :

12V

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Number of Terminations :

6

Peak Reflow Temperature (Cel) :

260

Rise Time :

34ns

Published :

2005

Pin Count :

6

Mount :

Surface Mount

Turn-Off Delay Time :

19 ns

Drain-source On Resistance-Max :

0.2Ohm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Terminal Finish :

MATTE TIN

Fall Time (Typ) :

34 ns

Qualification Status :

Not Qualified

Power Dissipation :

1.15W

JESD-30 Code :

R-PDSO-G6

Transistor Element Material :

SILICON

RoHS Status :

ROHS3 Compliant

Time@Peak Reflow Temperature-Max (s) :

40

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

JESD-609 Code :

e3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

FET Type :

2 P-Channel (Dual)

ECCN Code :

EAR99

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Continuous Drain Current (ID) :

1.8A

Operating Temperature :

-55°C~150°C TJ