SI3948DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Fall Time (Typ) :

9 ns

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

FET Type :

2 N-Channel (Dual)

Length :

3.05mm

Terminal Finish :

Matte Tin (Sn)

Pin Count :

6

ECCN Code :

EAR99

Power Dissipation :

1.15W

RoHS Status :

ROHS3 Compliant

Pbfree Code :

yes

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Base Part Number :

SI3948

Number of Pins :

6

Turn-Off Delay Time :

13 ns

Drain-source On Resistance-Max :

0.105Ohm

Drain to Source Breakdown Voltage :

30V

Rise Time :

9ns

Number of Elements :

2

Number of Terminations :

6

Width :

1.65mm

Weight :

19.986414mg

Max Power Dissipation :

1.15W

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 5V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate to Source Voltage (Vgs) :

20V

Radiation Hardening :

No

Series :

TrenchFET®

Turn On Delay Time :

7 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

105m Ω @ 2.5A, 10V

FET Feature :

Logic Level Gate

Continuous Drain Current (ID) :

2.5A

Package / Case :

SOT-23-6 Thin, TSOT-23-6

JESD-609 Code :

e3

Height :

1mm

Published :

2016

Mount :

Surface Mount

Lead Free :

Lead Free

Peak Reflow Temperature (Cel) :

260

Terminal Form :

Gull wing

Element Configuration :

Dual

Time@Peak Reflow Temperature-Max (s) :

40