SI3948DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Published :

2016

JESD-609 Code :

e3

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Weight :

19.986414mg

Mounting Type :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 5V

Number of Terminations :

6

Turn-Off Delay Time :

13 ns

Terminal Form :

Gull wing

FET Feature :

Logic Level Gate

Fall Time (Typ) :

9 ns

Pin Count :

6

Peak Reflow Temperature (Cel) :

260

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Number of Elements :

2

Width :

1.65mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Element Configuration :

Dual

Series :

TrenchFET®

Operating Mode :

ENHANCEMENT MODE

Time@Peak Reflow Temperature-Max (s) :

40

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

SI3948

Terminal Finish :

Matte Tin (Sn)

Turn On Delay Time :

7 ns

Power Dissipation :

1.15W

Mount :

Surface Mount

Rise Time :

9ns

Pbfree Code :

yes

FET Type :

2 N-Channel (Dual)

Number of Pins :

6

Height :

1mm

Drain to Source Breakdown Voltage :

30V

Lead Free :

Lead Free

RoHS Status :

ROHS3 Compliant

Transistor Element Material :

SILICON

Drain-source On Resistance-Max :

0.105Ohm

Max Power Dissipation :

1.15W

Operating Temperature :

-55°C~150°C TJ

ECCN Code :

EAR99

Continuous Drain Current (ID) :

2.5A

Rds On (Max) @ Id, Vgs :

105m Ω @ 2.5A, 10V

Length :

3.05mm

Package / Case :

SOT-23-6 Thin, TSOT-23-6