SI3900DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Radiation Hardening :

No

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Terminal Finish :

PURE MATTE TIN

Terminal Form :

Gull wing

JESD-609 Code :

e3

Fall Time (Typ) :

6 ns

Pin Count :

6

Drain to Source Breakdown Voltage :

20V

Mount :

Surface Mount

Rds On (Max) @ Id, Vgs :

125m Ω @ 2.4A, 4.5V

Peak Reflow Temperature (Cel) :

260

Power Dissipation :

830mW

ECCN Code :

EAR99

Packaging :

Tape and Reel (TR)

Weight :

19.986414mg

Number of Pins :

6

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

2A

Number of Terminations :

6

FET Type :

2 N-Channel (Dual)

Operating Mode :

ENHANCEMENT MODE

Rise Time :

30ns

Max Power Dissipation :

830mW

Transistor Element Material :

SILICON

Turn On Delay Time :

10 ns

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Time@Peak Reflow Temperature-Max (s) :

30

Continuous Drain Current (ID) :

2.4A

Number of Elements :

2

Gate Charge (Qg) (Max) @ Vgs :

4nC @ 4.5V

Element Configuration :

Dual

Series :

TrenchFET®

Published :

2013

Factory Lead Time :

14 Weeks

Gate to Source Voltage (Vgs) :

12V

Base Part Number :

SI3900

Turn-Off Delay Time :

14 ns

RoHS Status :

ROHS3 Compliant

Drain Current-Max (Abs) (ID) :

2A

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Moisture Sensitivity Level (MSL) :

1 (Unlimited)