SI3590DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Rise Time :

15ns

Max Junction Temperature (Tj) :

150°C

Continuous Drain Current (ID) :

2.5A

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Transistor Application :

SWITCHING

Number of Channels :

2

Fall Time (Typ) :

15 ns

Height :

1.1mm

Series :

TrenchFET®

Terminal Finish :

Matte Tin (Sn)

Power Dissipation :

830mW

Radiation Hardening :

No

ECCN Code :

EAR99

Pin Count :

6

Drain to Source Breakdown Voltage :

30V

Terminal Position :

Dual

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Turn-Off Delay Time :

20 ns

Gate Charge (Qg) (Max) @ Vgs :

4.5nC @ 4.5V

Length :

3.05mm

Peak Reflow Temperature (Cel) :

260

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Form :

Gull wing

Number of Terminations :

6

Packaging :

Tape and Reel (TR)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Rds On (Max) @ Id, Vgs :

77m Ω @ 3A, 4.5V

Number of Pins :

6

Transistor Element Material :

SILICON

Nominal Vgs :

600 mV

Factory Lead Time :

14 Weeks

Current - Continuous Drain (Id) @ 25°C :

2.5A 1.7A

Vgs(th) (Max) @ Id :

1.5V @ 250µA

Published :

2011

Number of Elements :

2

Resistance :

170mOhm

Pbfree Code :

yes

Base Part Number :

SI3590

Width :

1.65mm

Mounting Type :

Surface Mount

Mount :

Surface Mount

JESD-609 Code :

e3

Time@Peak Reflow Temperature-Max (s) :

40

Operating Temperature :

-55°C~150°C TJ

Max Power Dissipation :

830mW

REACH SVHC :

Unknown

FET Type :

N and P-Channel

RoHS Status :

ROHS3 Compliant

Lead Free :

Lead Free

FET Feature :

Logic Level Gate

Turn On Delay Time :

5 ns

Weight :

19.986414mg

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

12V