SI3588DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Peak Reflow Temperature (Cel) :

260

Radiation Hardening :

No

Nominal Vgs :

450 mV

Gate to Source Voltage (Vgs) :

8V

Operating Mode :

ENHANCEMENT MODE

Operating Temperature :

-55°C~150°C TJ

Number of Terminations :

6

Threshold Voltage :

450mV

Lead Free :

Lead Free

Fall Time (Typ) :

29 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Terminal Finish :

Pure Matte Tin (Sn)

Transistor Element Material :

SILICON

Terminal Form :

Gull wing

Number of Pins :

6

Pin Count :

6

Mount :

Surface Mount

Max Power Dissipation :

830mW

ECCN Code :

EAR99

Turn-Off Delay Time :

24 ns

Rds On (Max) @ Id, Vgs :

80m Ω @ 3A, 4.5V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Base Part Number :

SI3588

REACH SVHC :

No SVHC

Power Dissipation :

830mW

Series :

TrenchFET®

Number of Elements :

2

Power - Max :

830mW 83mW

Rise Time :

29ns

Element Configuration :

Dual

Resistance :

145mOhm

Current - Continuous Drain (Id) @ 25°C :

2.5A 570mA

Vgs(th) (Max) @ Id :

450mV @ 250μA (Min)

Continuous Drain Current (ID) :

3A

Packaging :

Tape and Reel (TR)

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

7.5nC @ 4.5V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Time@Peak Reflow Temperature-Max (s) :

30

Drain to Source Breakdown Voltage :

20V

Pbfree Code :

yes

Mounting Type :

Surface Mount

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel