SI3585DV-T1-GE3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Packaging :

Tape and Reel (TR)

Mounting Type :

Surface Mount

Drain to Source Breakdown Voltage :

20V

Threshold Voltage :

600mV

REACH SVHC :

Unknown

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

6

Series :

TrenchFET®

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 4.5V

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.125Ohm

FET Type :

N and P-Channel

Vgs(th) (Max) @ Id :

600mV @ 250μA (Min)

ECCN Code :

EAR99

Terminal Form :

Gull wing

Pbfree Code :

yes

Element Configuration :

Dual

Published :

2013

Max Power Dissipation :

830mW

Number of Elements :

2

Number of Pins :

6

Terminal Finish :

PURE MATTE TIN

Transistor Element Material :

SILICON

Mount :

Surface Mount

Pin Count :

6

Drain Current-Max (Abs) (ID) :

2A

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant

JESD-609 Code :

e3

Gate to Source Voltage (Vgs) :

12V

Time@Peak Reflow Temperature-Max (s) :

30

FET Feature :

Logic Level Gate

Nominal Vgs :

600 mV

Base Part Number :

SI3585

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Current - Continuous Drain (Id) @ 25°C :

2A 1.5A

Peak Reflow Temperature (Cel) :

260

Rds On (Max) @ Id, Vgs :

125m Ω @ 2.4A, 4.5V

Polarity/Channel Type :

N-CHANNEL AND P-CHANNEL

Continuous Drain Current (ID) :

1.8A