SI3552DV-T1-E3

Manufacturer :

Vishay

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

1V @ 250μA (Min)

Rds On (Max) @ Id, Vgs :

105mOhm @ 2.5A, 10V

Element Configuration :

Single

Turn-Off Delay Time :

12 ns

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 5V

Max Operating Temperature :

150°C

Width :

1.65mm

Turn On Delay Time :

8 ns

Number of Channels :

2

Drain to Source Resistance :

85mOhm

Fall Time (Typ) :

7 ns

Number of Pins :

6

Series :

TrenchFET®

Length :

3.05mm

Max Power Dissipation :

1.15W

Base Part Number :

SI3552

Operating Temperature :

-55°C~150°C TJ

Number of Elements :

2

Current - Continuous Drain (Id) @ 25°C :

2.5A

Drain to Source Breakdown Voltage :

30V

Threshold Voltage :

1V

Continuous Drain Current (ID) :

51A

Height :

1mm

Drain to Source Voltage (Vdss) :

30V

FET Type :

N and P-Channel

RoHS Status :

ROHS3 Compliant

Rise Time :

12ns

Nominal Vgs :

1 V

Weight :

19.986414mg

Radiation Hardening :

No

Gate to Source Voltage (Vgs) :

20V

Mount :

Surface Mount

Packaging :

Tape and Reel (TR)

FET Feature :

Logic Level Gate

Published :

2007

Min Operating Temperature :

-55°C

REACH SVHC :

Unknown

Power - Max :

1.15W

Supplier Device Package :

6-TSOP

Power Dissipation :

1.15W

Resistance :

200mOhm

Rds On Max :

105 mΩ

Mounting Type :

Surface Mount

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Moisture Sensitivity Level (MSL) :

1 (Unlimited)